Zobrazeno 1 - 10
of 99
pro vyhledávání: '"N.A. Hegab"'
Publikováno v:
Journal of Alloys and Compounds. 764:498-504
Thin films of Te81Ge15Bi4 were prepared from its bulk glass by thermal evaporation method. Amorphous structure of the prepared films was examined by X-ray diffraction (XRD). Differential thermal analysis (DTA) was carried out to obtain the glass tran
Publikováno v:
Journal of Alloys and Compounds. 743:36-43
Various factors as temperature, thickness and element addition effect on the electrical conductivity and switching phenomenon in Se85 Te15 X5 (x=In, Sn)films was examined and discussed herein. Structural identification of the film compositions is con
Autor:
N.A. Hegab, H.E. Atyia
Publikováno v:
Optik. 243:167527
This work aims to research the crystallization transition kinetics aspects for Se60Ge15As25 and Se60Ge15Sn25 compositions, utilized differential thermal analysis technique under the non-isothermal condition at various heating rates. Crystallization t
Publikováno v:
Journal of Alloys and Compounds. 876:159805
Se36 Sb31Cu33 non - ordered material was synthesized by the melt-quenching procedure. Thin films of various thicknesses (125–520 nm) were obtained by thermal evaporation procedure. The DC conductivity and switching phenomenon were examined in the t
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 131:1793-1802
This work aims to research the glass transition kinetics aspects for Se60Ge15As25 and Se60Ge15Sn25 compositions, utilized differential thermal analysis technique under the non-isothermal condition at various heating rates. Glass transition temperatur
Autor:
N.A. Hegab, H.E. Atyia
Publikováno v:
Optik. 127:6232-6242
Alternating current conductivity and dielectric properties measurements have been performed on the Te 46 As 32 Ge 10 Si 12 amorphous films at frequency and temperature ranges (0.1–100 kHz)and (303–383 K) respectively. The ac conductivities were a
Publikováno v:
Journal of Electronic Materials. 45:3332-3339
Se80Ge20−xCdx (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film s
Autor:
H.E. Atyia, N.A. Hegab
Publikováno v:
Optik. 127:3888-3894
In this work, the effect of annealing temperature, above room temperature, on the optical constants, optical band gap, dielectric constants and some related optical parameters for Ge 20 In 5 Se 75 films with thickness range (190–435 nm) has been in
Autor:
N.A. Hegab, H.E. Atyia
Publikováno v:
Physica B: Condensed Matter. 454:189-196
Thin films of Ge15Se60Bi25 were deposited, at room temperature, on glass substrates by thermal evaporation technique. The optical reflectance and transmittance of amorphous Ge15Se60Bi25 films were measured at normal incident in the wavelength range (
Publikováno v:
Journal of Electronic Materials. 44:87-95
Se80Ge20−xCdx (0 ≤ x ≤ 12 at.%) compositions were prepared by the conventional melt quenching technique. Thin films with different thicknesses (200–620 nm) were deposited by thermal evaporation technique. Energy dispersive x-ray spectroscopy