Zobrazeno 1 - 10
of 28
pro vyhledávání: '"N.-S. Tsai"'
Publikováno v:
Solid-State Electronics. 38:1473-1477
Ultra-shallow (∼0.1 μm) junctions are needed for sub-0.25 μm MOSFET devices. These junctions can be made by implanting dopants into silicides and then drive out by RTA (Rapid Thermal Anneal). Compared to furnace processed junctions, however, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2d990e2f880dcc92c14ed0f23fe0b4d
https://doi.org/10.1016/0038-1101(94)00270-p
https://doi.org/10.1016/0038-1101(94)00270-p
Publikováno v:
Journal of Applied Physics. 73:5038-5042
Anomalous interface states were caused by post‐oxide rapid thermal annealing in an n+ polycrystalline silicon metal‐oxide‐semiconductor capacitor. These anomalous interface states have been investigated using high/low frequency capacitance/gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27dd5e043b0d220988bd3d3c0988d064
https://doi.org/10.1063/1.353774
https://doi.org/10.1063/1.353774
Publikováno v:
IEEE Transactions on Electron Devices. 38:246-254
Submicrometer CMOS transistors require shallow junctions to minimize punchthrough and short-channel effects. Salicide technology is a very attractive metallization scheme to solve many CMOS scaling problems. However, to achieve a shallow junction wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d5a67f7042d3677817a8e047a7151a
https://doi.org/10.1109/16.69902
https://doi.org/10.1109/16.69902
Publikováno v:
Applied Physics Letters. 61:447-449
An anomalous different threshold voltage shift between P‐channel metal‐oxide‐semiconductor field effect transistor (P‐MOSFET) and N‐channel MOSFET under high temperature rapid thermal annealing (RTA) borophosphosilicate glass reflow has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e525961be11ad8baadd5c47a081a86e2
https://doi.org/10.1063/1.107910
https://doi.org/10.1063/1.107910
Publikováno v:
Applied Physics Letters. 63:3058-3059
Significant gate induced drain leakage caused by post‐oxide rapid thermal annealing (RTA) was studied in this letter in comparison with the non‐RTA process for n‐channel metal‐oxide‐ semiconductor field effect transistor. It is found that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bc22b2c5f47446644cc23498e107160
https://doi.org/10.1063/1.110257
https://doi.org/10.1063/1.110257
Publikováno v:
IEEE Transactions on Electron Devices. 36:2530-2536
A 3.3-V CMOS technology with 0.6- mu m design rules in sixth-generation twin-tub CMOS (twin-tub VI) was developed. The major features of the device in this technology are: HIPOX twin-tub structure, n/sup +//p/sup +/ dual-type poly gate, 125-AA thin g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5162c11c93bc8be8d20ee81ade868fc4
https://doi.org/10.1109/16.43677
https://doi.org/10.1109/16.43677
Autor:
N. S. Tsai, Thomas W. Eagar
Publikováno v:
Journal of Materials for Energy Systems. 6:33-37
Factors influencing the size and shape of the sensitization zone in 304 stainless steel welds have been studied through a statistically designed experiment. The results indicate that the width of the sensitization zone is in proportion to the magnitu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d642721ae044047a498bccc99cf1c5
https://doi.org/10.1007/bf02833413
https://doi.org/10.1007/bf02833413
Autor:
Thomas W. Eagar, N. S. Tsai
Publikováno v:
Metallurgical Transactions B. 16:841-846
The distribution of heat flux on a water-cooled copper anode as a function of welding process parameters has been determined experimentally following an experimental technique developed previously. The results indicate that arc length is the primary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::884f0a5be4be09e8797f8cddd7d2faea
https://doi.org/10.1007/bf02667521
https://doi.org/10.1007/bf02667521
Publikováno v:
IEEE Transactions on Electron Devices. 35:230-239
A dielectrically isolated bipolar-CMOS-DMOS (BCDMOS) integrated-circuit technology that has been successfully developed for high-voltage applications (150-500 V) is reported. This technology integrates bipolar, CMOS, DMOS, p-n-p-n, JFET, and DGDMOS (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48fe3ae406d4c0195e5400f190ce421d
https://doi.org/10.1109/16.2443
https://doi.org/10.1109/16.2443
Autor:
N. S. Tsai, C. Y. Lu
Publikováno v:
Journal of Applied Physics. 59:3574-3576
The thermal oxidation of heavily boron‐implanted low‐pressure chemical vapor deposition (LPCVD) polysilicon films in dry and wet oxygen ambients has been studied. In order to understand the roles of grain boundaries, randomly oriented crystallite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::480667d87a90ba224b06b37dfc3c6664
https://doi.org/10.1063/1.336781
https://doi.org/10.1063/1.336781