Výsledky vyhledávání - "N.-H. Schmidt"

Is fast mapping good mapping? A review of the benefits of high-speed orientation mapping using electron backscatter diffraction

Autor: A Day, K. Mehnert, Patrick Trimby, N H Schmidt

Publikováno v: Journal of Microscopy. 205:259-269

Orientation mapping using automated electron backscatter diffraction (EBSD) is now a common technique for characterizing microstructures. Improvements in software and hardware have resulted in high-speed mapping capabilities above 80,000 points h(-1)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e55fb03e74f44db7e9194215523f5c3d
https://doi.org/10.1046/j.1365-2818.2002.00995.x

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Crystallographic textures

Autor: G. E. Lloyd, N.-H. Schmidt, D. Mainprice, D. J. Prior

Publikováno v: Mineralogical Magazine. 55:331-345

To material scientists the term texture means the crystallographic orientation of grains in a polycrystal. In contrast, geologists use the term more generally to refer to the spatial arrangement or association of mineral grains in a rock. In this con

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35ac5a155568836365966007a609eae7
https://doi.org/10.1180/minmag.1991.055.380.04

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Local Texture Measurements by EBSP. New Computer Procedures

Autor: D. Juul Jensen, N. H. Schmidt

Publikováno v: Technical University of Denmark Orbit

Two new computer procedures for analysis of electron back scattering patterns (EBSP) are presented. One is a semiautomatic procedure for on-line analysis of EBSPs. The other is an image processing procedure for computer identification of bands in an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1c8321212afe742af399183c272ea79
https://doi.org/10.1155/tsm.14-18.97

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Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films

Autor: Ian Watson, Patrick Trimby, Angus J. Wilkinson, A. P. Day, Peter J. Parbrook, Ali Gholinia, Carol Trager-Cowan, F. Sweeney, N. H. Schmidt

Publikováno v: PHYSICAL REVIEW B. 75(8)

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show result

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09b8f568084d1aa8699a0c794d03fae3
http://ora.ox.ac.uk/objects/uuid:79d5d292-952c-4f28-bc13-97559edeef6a

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Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines

Autor: Rainer Florian Schnabel, Kenneth P. Rodbell, Stefan Weber, Lynne Gignac, Lawrence A. Clevenger, R. C. Iggulden, J. L. Hurd, N. H. Schmidt

Publikováno v: Applied Physics Letters. 72:326-328

The local texture in three types of patterned, thin-film, Al and AlCu interconnections on Si semiconductor devices is investigated by electron backscatter diffraction. Two types of standard planar metal structures were investigated: (1) blanket Al an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70f368cd088e1e84aa0c50db69c242f6
https://doi.org/10.1063/1.120726

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Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging

Autor: Ali Gholinia, Peter J. Parbrook, N. H. Schmidt, Patrick Trimby, Carol Trager-Cowan, Angus J. Wilkinson, F. Sweeney, Ian Watson, A. P. Day

Publikováno v: University of Strathclyde
University of Manchester-PURE
Scopus-Elsevier

In the present paper the authors describe the use of electron backscatter diffraction (EBSD) mapping and electron channelling contrast imaging (in the scanning electron microscope) to study tilt, strain, atomic steps and dislocations in epitaxial GaN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb6d8aa06f1173f9e1a3ee4965ebee12
https://pureportal.strath.ac.uk/en/publications/31f0b1bc-6470-46f7-afdd-e14c91330acc

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Akademický článek

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