Zobrazeno 1 - 10
of 30
pro vyhledávání: '"N. le Biavan"'
Autor:
A. Jollivet, P. Quach, M. Tchernycheva, R. Ferreira, E. Di Russo, L. Rigutti, B. Vinter, N. le Biavan, D. Lefebvre, M. Hugues, J-M. Chauveau, F. H. Julien
Publikováno v:
Physical Review B. 105
Autor:
E. Martínez Castellano, Adrian Hierro, Miguel Montes Bajo, Julen Tamayo-Arriola, Denis Lefebvre, Maxime Hugues, N. Le Biavan, J. M. Chauveau
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2021, 567, pp.150816. ⟨10.1016/j.apsusc.2021.150816⟩
Applied Surface Science, 567
Applied Surface Science, Elsevier, 2021, 567, pp.150816. ⟨10.1016/j.apsusc.2021.150816⟩
Applied Surface Science, 567
A method based on infrared reflectance spectroscopy is presented by which the Mg content in ZnO/(Zn,Mg)O multiple quantum wells with very thin barriers can be determined. The method relies on the observation of interface phonon-polaritons which appea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0d91b46cbe3d5b2decb03f0d21b183c
https://hal.archives-ouvertes.fr/hal-03423396/document
https://hal.archives-ouvertes.fr/hal-03423396/document
Autor:
E. Di Russo, L. Rigutti, Angela Vella, François Vurpillot, J. M. Chauveau, Simona Moldovan, Georges Beainy, N. Le Biavan, Jonathan Houard, Maxime Hugues, Pradip Dalapati, Ivan Blum
Publikováno v:
Physical Review Applied
Physical Review Applied, American Physical Society, 2021, 15 (2), ⟨10.1103/physrevapplied.15.024014⟩
Physical Review Applied, 2021, 15 (2), ⟨10.1103/physrevapplied.15.024014⟩
Physical Review Applied, American Physical Society, 2021, 15 (2), ⟨10.1103/physrevapplied.15.024014⟩
Physical Review Applied, 2021, 15 (2), ⟨10.1103/physrevapplied.15.024014⟩
The possibility of measuring in situ operando photoluminescence spectroscopy within a photonic atom probe allows for the real-time study of the mechanical stress state within a field emitter either statically, as a function of the field-induced tensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b100bf0e7940c5ba4205e27e5d756d8c
https://hal.archives-ouvertes.fr/hal-03138523/document
https://hal.archives-ouvertes.fr/hal-03138523/document
Autor:
H. Hoang, Borislav Hinkov, Gottfried Strasser, Jérôme Faist, David Stark, Bo Meng, Maxime Hugues, N. Le Biavan, J. M. Chauveau
Publikováno v:
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
Terahertz intersubbband electrolulminescence from ZnO quantum cascade structures, based on four quantum well per period, is presented. The whole cascade structure was grown on the m-plane ZnO substrate. An electroluminescence peak with a linewidth of
Autor:
Almudena Torres-Pardo, Julen Tamayo-Arriola, Denis Lefebvre, Bo Meng, Maxime Hugues, N. Le Biavan, J. M. Chauveau, Adrian Hierro, Jérôme Faist, Miguel Montes Bajo
Publikováno v:
Oxide-based Materials and Devices XI.
Recently Zinc Oxide has received a renewed attention for the realization of intersubband devices such as quantum cascade lasers (QCLs). Indeed this material is predicted to be able to tackle the main limitation of current terahertz (THz) QCLs: the li
Autor:
Julen Tamayo-Arriola, Denis Lefebvre, JM José Maria Ulloa, P. Vennéguès, N. Le Biavan, Adrian Hierro, J. M. Chauveau, Maxime Hugues, Miguel Montes Bajo
Publikováno v:
Oxide-based Materials and Devices X
Oxide-based Materials and Devices X, Feb 2019, San Francisco, France. pp.80, ⟨10.1117/12.2509524⟩
Oxide-based Materials and Devices X, Feb 2019, San Francisco, France. pp.80, ⟨10.1117/12.2509524⟩
Intersubband absorption at normal incidence is forbidden by the selection rules and requires oblique incidence operation or texturing of the surface of intersubband-based devices such as focal plane arrays, adding additional processing steps to their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71f660fb1646b42f8bc5bb30fdf01d82
https://hal.archives-ouvertes.fr/hal-02409439
https://hal.archives-ouvertes.fr/hal-02409439
Autor:
Adrian Hierro, Julien Jaeck, Julen Tamayo-Arriola, Raffaele Colombelli, J-M Chauveau, Adel Bousseksou, Gottfried Strasser, N. Le Biavan, Sophie Derelle, Arnaud Jollivet, Hanh T. Hoang, Maria Tchernycheva, Maxime Hugues, S. Pirotta, François H. Julien, Borislav Hinkov, Miguel Montes Bajo, Lorenzo Rigutti
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 113 (25), pp.251104. ⟨10.1063/1.5058120⟩
Applied Physics Letters, American Institute of Physics, 2019, 113 (251104), pp.251104-1-251104-5. ⟨10.1063/1.5058120⟩
Applied Physics Letters, 2019, 113 (251104), pp.251104-1-251104-5. ⟨10.1063/1.5058120⟩
Applied Physics Letters, American Institute of Physics, 2018, 113 (25), pp.251104. ⟨10.1063/1.5058120⟩
Applied Physics Letters, American Institute of Physics, 2019, 113 (251104), pp.251104-1-251104-5. ⟨10.1063/1.5058120⟩
Applied Physics Letters, 2019, 113 (251104), pp.251104-1-251104-5. ⟨10.1063/1.5058120⟩
International audience; This paper reports on the demonstration of quantum cascade detectors (QCDs) based on ZnO/ ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an m-plane ZnO substrate. The TM-polarized intersubband absorption is peake
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c4166f1a8c8d315bb47c7ce4bfb1948
https://hal.archives-ouvertes.fr/hal-02088763
https://hal.archives-ouvertes.fr/hal-02088763
Autor:
Julen Tamayo-Arriola, Denis Lefebvre, Jean-Michel Chauveau, Maxime Hugues, Miguel Montes Bajo, N. Le Biavan, P. Vennéguès, JM José Maria Ulloa, Adrian Hierro
Publikováno v:
Physical Review Applied. 10
Optoelectronic devices based on intersubband transitions (ISBT) typically require surface texturing after growth, to overcome the selection rules for polarization and operate under normally incident light. The authors demonstrate that $m$-plane ZnO/(
Autor:
Julen Tamayo-Arriola, Denis Lefebvre, François H. Julien, Yvon Cordier, Borge Vinter, Maxime Hugues, Miguel Montes Bajo, Adrian Hierro, Jean-Michel Chauveau, N. Le Biavan, Arnaud Jollivet
Publikováno v:
Applied Physics Letters
We have developed a method to grow and characterize the state of the art non-polar ZnO/(Zn,Mg)O multi-quantum wells on m-plane ZnO substrates as a prerequisite for applications based on intersubband transitions. The epilayer interfaces exhibit a low
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