Zobrazeno 1 - 10
of 10
pro vyhledávání: '"N. de B. Baynes"'
Publikováno v:
Optical and Quantum Electronics. 28:875-896
An integrated optoelectronic circuit for ultrafast sampling of multi-terminal devices is described. This is achieved using optimized photoconductive switches fabricated from low-temperature-grown GaAs, monolithic integration of the device with the sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63ff6e2669fe2db55849038a633eff0
https://doi.org/10.1007/bf00820154
https://doi.org/10.1007/bf00820154
Publikováno v:
Optical and Quantum Electronics. 28:907-917
In-plane-gate field-effect transistors are probed by femtosecond electrooptic sampling. Ultrafast response of the transistors is dominated by a displacement current induced by parasitic gate-drain capacitance. Intrinsic and parasitic gate-drain capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::153445d8a3a14a345a98281a85c7ac07
https://doi.org/10.1007/bf00820156
https://doi.org/10.1007/bf00820156
Publikováno v:
IEEE Microwave and Guided Wave Letters. 6:126-128
Mode-discriminating electrooptic sampling (MEOS) of coplanar waveguides was shown to discriminate between the symmetric quasi-TEM guided mode and asymmetric field distributions including unguided electromagnetic radiation. Radiation generated in a ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b18f29820407c1846fbcd8a44af9c677
https://doi.org/10.1109/75.481088
https://doi.org/10.1109/75.481088
Publikováno v:
Applied Physics Letters. 66:1228-1230
An in‐plane gate field‐effect transistor is characterized by ultrafast electro‐optic sampling. The transistor is monolithically integrated with photoconductive switches in coplanar waveguide and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0da360b6e65023b83267350aaa02cb2
https://doi.org/10.1063/1.113245
https://doi.org/10.1063/1.113245
Publikováno v:
Ultrafast Electronics and Optoelectronics.
Coplanar waveguides (CPW) are attractive transmission lines for monolithic microwave integrated circuits due to low dispersion and easy integration with planar devices. Due to the presence of two ground planes, both the quasi-TEM symmetric CPW mode a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b50e7c8be7e0dd074bb49790df41812
https://doi.org/10.1364/ueo.1995.umd4
https://doi.org/10.1364/ueo.1995.umd4
Publikováno v:
IEE Colloquium on Terahertz Technology.
The increasing performance of semiconductor devices and millimetre-wave integrated circuits imposes corresponding requirements on measurement techniques, if characterization is to be achieved directly over the full frequency range, without reliance o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499dd68d1f27f360a2ac23bef4f108f1
https://doi.org/10.1049/ic:19951488
https://doi.org/10.1049/ic:19951488
Autor:
Jeremy J. Baumberg, N. de B. Baynes, Tomoyoshi Mishima, J. Allam, J. R. A. Cleaver, Isao Ohbu, K. Ogawa
Publikováno v:
Ultrafast Electronics and Optoelectronics.
The in-plane-gate field-effect transistor (IPGFET) with gate-channel isolation by mesa trench exhibits very small gate-channel capacitance1 due to the planar geometry. In this paper the parasitic capacitance is measured using electro-optic sampling2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a14513a3920ed4b2a9555fd52317df2d
https://doi.org/10.1364/ueo.1995.utue10
https://doi.org/10.1364/ueo.1995.utue10
Autor:
K. Ogawa, Isao Ohbu, N. de B. Baynes, J. Allam, J. R. A. Cleaver, Tomoyoshi Mishima, J. White, Tomonori Tanoue
Publikováno v:
Ultrafast Electronics and Optoelectronics.
Characterisation of electronic devices at frequencies up to several hundred GHz can be achieved using electrooptic1 or photoconductive sampling. GaAs grown at low temperature by molecular beam epitaxy (LT GaAs) is a suitable material for fabrication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30284d3b49cffb9f633e6cd2a1d91b33
https://doi.org/10.1364/ueo.1993.g4
https://doi.org/10.1364/ueo.1993.g4
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Conference
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