Zobrazeno 1 - 10
of 19
pro vyhledávání: '"N. Z. Gasanov"'
Publikováno v:
Inorganic Materials. 55:765-769
We have studied the phase diagram of the TlInSe2–TlTmSe2 system and shown that it contains a congruently melting compound with the composition Tl2InTmSe4 (1 : 1 ratio of the constituent selenides). At room temperature, TlInSe2 dissolves 5 mol % TlT
Publikováno v:
Inorganic Materials. 49:1175-1179
TlGa1 − xErxS2 (x = 0, 0.001, 0.005, 0.01) solid solutions, based on the layered compound TlGaS2, have been prepared by direct elemental synthesis. The effect of Er concentration on the dielectric and optical properties of the TlGa1 − xErxS2 soli
Autor:
MirHasan Yu. Seyidov, E. M. Kerimova, N. Z. Gasanov, R. Z. Sadykhov, F. M. Seyidov, R. G. Veliyev, Yu. G. Asadov
Publikováno v:
Bulletin of Materials Science. 36:693-698
Investigation of dielectric properties of layered compound, TlGaSe2, showed that it is a ferroelectric (Tc = 105·5 K) with an intermediate incommensurate phase (Ti = 114·5 K). Our magnetic studies of layered compounds, TlCrS2 and TlCrSe2, for the f
Publikováno v:
Inorganic Materials. 47:1302-1305
We have studied phase relations in the TlInS2-TlYbS2 system and showed that it contains a congruently melting compound of composition Tl2InYbS4 (1: 1 ratio of the constituent sulfides). According to X-ray diffraction results, the compound Tl2InYbS4 c
Publikováno v:
Inorganic Materials. 46:1299-1303
We have studied phase equilibria in the TlSe-SmSe system and showed that it contains a congruently melting compound of composition TlSmSe2 (1: 1 ratio of the constituent selenides) and a TlSe-based solid solution series. The electrical and thermophys
Publikováno v:
Journal of Physics: Condensed Matter. 15:1291-1298
The deformation effects in electronic spectra of the ternary layered semiconductors TlGaS2, TlGaSe2 and TlInS2 are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions o
Publikováno v:
Inorganic Materials. 48:984-986
We have constructed the T-x phase diagram of the TlGaS2-TlFeS2 system (simple eutectic system, eutectic at 80 mol % TlFeS2 with a melting point of 953 K). The system contains limited series of monoclinic solid solutions based on the ternary end-membe
Publikováno v:
Physics of the Solid State. 43:443-446
The absorption spectra of Tl1−xCuxInS2 single crystals (x=0; 0.005; 0.010; 0.015) are interpreted using experimental data. The allowed interband direct transitions are determined, and the energy gap, binding energy, temperature-shift coefficient, B
Publikováno v:
Low Temperature Physics. 33:86-88
Semiconductor solid solutions of the system TlGaSe2–TlFeSe2 are investigated. The parameters of the crystal lattice of the compounds of this system are established with the aid of an x-ray structural analysis. Experimental studies of the absorption
Publikováno v:
Semiconductors. 32:131-132
It is shown that lithium-ion intercalation of TlGaSe2 single crystal leads to a shift of the exciton peak associated with the direct edge toward longer wavelengths (ΔE=15 meV at 5 K). As a result, the temperature shift of the exciton peak in TlGaSe2