Zobrazeno 1 - 8
of 8
pro vyhledávání: '"N. Yu. Suchkova"'
Publikováno v:
Physics of the Solid State. 48:279-282
The rate of the radiation-stimulated change in the microhardness of silicon single crystals exposed to irradiation with a low-intensity flux of beta particles (105 < I < 2.9 × 106 cm−2 s−1) is studied as a function of the radiation intensity. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb545155d797ea037abfa8828d05e66c
https://doi.org/10.1134/s1063783406020144
https://doi.org/10.1134/s1063783406020144
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 72:934-936
Decelerating effect of electric fields on silicon microhardness changes induced by low-intensity (I = 10.4 × 104 cm−2 s−1) β irradiation has been revealed. The threshold character of the electric field effect is found (the effect is absent at e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c98658ba56f522779aab297cc7e2713
https://doi.org/10.3103/s1062873808070149
https://doi.org/10.3103/s1062873808070149
Publikováno v:
Physics of the Solid State. 50:25-27
The influence of the type and concentration of a dopant (P, Sb, B) on the dynamics of the transformation of a system of structural (intrinsic and radiation-induced) defects of silicon under low-intensity electron irradiation is investigated. A qualit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cfa7ade3841f2dacf7a3e73e35be42e
https://doi.org/10.1134/s106378340801006x
https://doi.org/10.1134/s106378340801006x
Publikováno v:
Physics of the Solid State. 49:865-867
Weak magnetic fields with an induction B = 0.28 T are found to have an effect on the transformation of subsystems of structural (intrinsic and radiation-induced) silicon defects under irradiation with a low-intensity flux of beta particles (I = 105 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f847e3db56e86f706aab868f789f7e11
https://doi.org/10.1134/s1063783407050101
https://doi.org/10.1134/s1063783407050101
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:204-206
It is shown that nonequilibrium point defects are of primary importance in the changes in the silicon microhardness induced by a low-intensity (I ∼ 105 cm−2 s−1) electron beam. It is found that the necessary condition for softening under low-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9586108d94fb9e943d6b5627b2c464
https://doi.org/10.1134/s1027451007020176
https://doi.org/10.1134/s1027451007020176
Autor:
I. V. Blokhin, N. Yu. Suchkova, M. V. Badylevich, A. A. Dmitrievskiĭ, S. V. Kartsev, Yu. I. Golovin, M. Yu. Tolotaev
Publikováno v:
Semiconductors. 40:1375-1377
Deep-level transient spectroscopy is used to study the dependence of the concentration of the donor-and acceptor-type radiation defects in silicon on the duration of irradiation with low-intensity fluxes of β particles (I ≈ 9 × 105 cm−2 s−1).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30409415ca35f18a8ea0c8a3cd120ee4
https://doi.org/10.1134/s1063782606120013
https://doi.org/10.1134/s1063782606120013
Publikováno v:
Physics of the Solid State. 46:1851-1853
Reversible softening of silicon single crystals under β irradiation with low doses (D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ea277f70884ec3a25521f29f904979
https://doi.org/10.1134/1.1809418
https://doi.org/10.1134/1.1809418
Publikováno v:
Physics of the Solid State. 47:1278
Radiation-stimulated and postradiation changes in the microhardness of silicon single crystals exposed to irradiation with a low-intensity flux of β particles (I = 9 × 105 cm−2 s−1, W = 0.20 + 0.93 MeV) are studied. It is established that the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf2bf121dc9663c4cd18a865a47f4851
https://doi.org/10.1134/1.1992605
https://doi.org/10.1134/1.1992605