Zobrazeno 1 - 10
of 307
pro vyhledávání: '"N. Yanagiya"'
Autor:
M. Hannah, M. Nagy, Y. Kawashima, H. Shinya, M. Iwase, Junpei Kumagai, M. Ohgata, P. Hansen, Tohru Furuyama, Takeshi Yoshida, Kenji Numata, Tomoaki Yabe, M. Enkaku, N. Yanagiya, Ryo Haga, Seiji Kaki, M. Rungsea, M. Sakurai, Anan Nagarajan, Kazuyuki Sato, Shinji Miyano, M. Shiochi, M. Wada
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:1281-1285
To realize high data-transfer rate in random access, several kinds of DRAMs with on-chip cache memory have been proposed. These DRAMs rely on locality of access to achieve the highest speed. However, in some graphic applications where sufficient loca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::515975b80090ae1e0294ececa832f02e
https://doi.org/10.1109/4.475717
https://doi.org/10.1109/4.475717
Autor:
N. Yanagiya, K. Miyamoto, T. Noguchi, S. Yamada, K. Suzuki, X. Li, W. Asano, M.S. Krishnan, Masakazu Kakumu, M. Nishigori, Eiji Morifuji, T. Brozek, M. Muta, T. Kumamori
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
In this paper, we focus on hydrogen related processes and its impact on system LSI. Hydrogen affects not only DRAM performance but also reliability characteristics for MOSFET such as NBTI (negative bias temperature instability), HCI (hot carrier inje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8044ef3bbbce4095d397625451852d5
https://doi.org/10.1109/vlsit.2002.1015459
https://doi.org/10.1109/vlsit.2002.1015459
Autor:
N. Yanagiya, S. Matsuda, M. Kanda, Takashi Yamamoto, Hisato Oyamatsu, K. Takahashi, S. Yamada, H. Tsuno, K. Okano, M. Nishigori, Satoshi Inaba, Mariko Takayanagi, Masakazu Kakumu, T. Noguchi, Eiji Morifuji, K. Hiyama
Publikováno v:
Digest. International Electron Devices Meeting.
In this paper, we demonstrate high performance CMOS devices developed for the 65 nm technology node. The gate length is shrunk down to 30 nm. The gate oxide is nitrided oxide of 1 nm EOT with an abrupt nitrogen profile. In order to satisfy both the h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0206362bde739e6e29d646ea3e0e90a
https://doi.org/10.1109/iedm.2002.1175924
https://doi.org/10.1109/iedm.2002.1175924
Autor:
S. Miyano, K. Numata, K. Sato, T. Yabe, M. Wada, R. Haga, M. Enkaku, M. Shiochi, Y. Kawashima, M. Iwase, M. Ohgata, J. Kumagai, T. Yoshida, M. Sakurai, S. Kaki, N. Yanagiya, H. Shinya, T. Furuyama, P. Hansen, M. Hannah, M. Nagy, null Anan Nagarajan, M. Rungsea
Publikováno v:
Proceedings ISSCC '95 - International Solid-State Circuits Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a5d7b570e8b05aab80ad0d55c1af236
https://doi.org/10.1109/isscc.1995.535564
https://doi.org/10.1109/isscc.1995.535564
Autor:
H. Takato, N. Iwabuchi, Takayasu Sakurai, Koichi Kokubun, Y. Morimasa, N. Yanagiya, M. Kishida, Takeshi Yoshida, M. Tanaka, T. Noguchi, J. Kumagai, T. Hashimoto, K. Hiyama, H. Naruse, Y. Takasu, H. Ishiuchi, H. Ohtsuka, A. Nomachi, T. Miyamae
Publikováno v:
Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).
A new fabrication method for embedded DRAM of 0.18 /spl mu/m generation is proposed, which realizes full compatibility with logic process such as Co salicide, dual work function gate, small thermal budget and metalization, and introduces Self-aligned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1078120acba16e33a788f7eb4a5cca79
https://doi.org/10.1109/cicc.2000.852618
https://doi.org/10.1109/cicc.2000.852618
Publikováno v:
Cardiovascular Surgery. 1:605-607
A patient with isolated pulmonary valve infective endocarditis without congenital heart disease was diagnosed at an early stage. Simple valvulectomy without replacement was successfully performed during the active stage of infection.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad836c6949b574f0714c7715c91687f
https://doi.org/10.1177/096721099300100528
https://doi.org/10.1177/096721099300100528
Autor:
Ma, Donghan1,2,3,4 (AUTHOR), Du, Guangqing2,3,4 (AUTHOR), Fang, Huan2,3,4 (AUTHOR), Li, Rong1 (AUTHOR) lirong@dlpu.edu.cn, Zhang, Dawei2,3,4,5 (AUTHOR) zhang_dw@tib.cas.cn
Publikováno v:
Microbial Cell Factories. 5/12/2024, Vol. 23 Issue 1, p1-14. 14p.
Autor:
N, Yanagiya, J, Akiba, M, Takahashi, A, Shimizu, A, Kakehashi, M, Kado, T, Hikichi, A, Yoshida
Publikováno v:
Japanese journal of ophthalmology. 40(4)
The clinical characteristics of 20 eyes of 20 consecutive patients with traumatic macular hole were studied retrospectively. The macular holes were elliptical with irregular edges in 19 eyes (95%) and ranged in size from 0.2 to 0.5 DD (disc diameter)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1c28b932b6e35e4aeee7f88cdb0276a1
https://pubmed.ncbi.nlm.nih.gov/9130060
https://pubmed.ncbi.nlm.nih.gov/9130060
Publikováno v:
Nippon Ganka Gakkai zasshi. 99(9)
We studied retrospectively the clinical features of 18 eyes of 18 patients with traumatic macular hole. The macular hole was elliptical with irregular edges in 17 eyes (94%) and its size ranged from 1/5 to 1/2 of the disc diameter. Posterior vitreous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3f345d01c10cb93230e155f640f3958e
https://pubmed.ncbi.nlm.nih.gov/7484503
https://pubmed.ncbi.nlm.nih.gov/7484503
Autor:
Y, Fukaya, H, Nobara, K, Nishimura, H, Miwa, H, Nakano, N, Yanagiya, M, Shinohara, M, Morimoto
Publikováno v:
[Zasshi] [Journal]. Nihon Kyobu Geka Gakkai. 40(12)
Twenty-nine patients who underwent operation at Shinshu University Hospital for the Stanford type A dissecting aneurysm were analysed. The patients were operated on in the acute stage within 2 weeks after onset. In 13 of these 26 acute cases, the gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1662c19c4d9d58c81dc39adca793ee11
https://pubmed.ncbi.nlm.nih.gov/1491196
https://pubmed.ncbi.nlm.nih.gov/1491196