Zobrazeno 1 - 10
of 15
pro vyhledávání: '"N. Y. Jin-Phillipp"'
Publikováno v:
Science
Science, American Association for the Advancement of Science, 2008, 321 (5896), pp.1654. ⟨10.1126/science.1160845⟩
Science, 2008, 321 (5896), pp.1654. ⟨10.1126/science.1160845⟩
Science, American Association for the Advancement of Science, 2008, 321 (5896), pp.1654. ⟨10.1126/science.1160845⟩
Science, 2008, 321 (5896), pp.1654. ⟨10.1126/science.1160845⟩
The microscopic insight into how and why catalytically active nanoparticles change their shape during oxidation and reduction reactions is a pivotal challenge in the fundamental understanding of heterogeneous catalysis. We report an oxygen-induced sh
Autor:
F. Phillipp, N. Y. Jin-Phillipp
Publikováno v:
Philosophical Magazine. 84:3509-3516
The atomic structures of dislocations in BaF2/CaF2 (111) multilayers grown on Al2O3 were studied by high-resolution transmission electron microscopy on ( ) and ( ) cross-sections. It was found that dislocations generated in these multilayers have str
Publikováno v:
Carbon. 42:1-4
Composite flakes of carbon, silicon carbide (SiC) and carbon nanotubes were synthesized by spray pyrolysis employing a slurry of ferrocene (Fe(C5H5)2) and SiC powders in xylene at 1000 ± 50 °C. These flakes were characterized for their microstructu
Publikováno v:
Journal of Materials Research. 16:261-267
GaN grown on sapphire (α–Al2O3) was characterized by laser-induced molecular beam epitaxy. Threading dislocations with Burgers vectors of 1/3〈1120〉, 1/3〈1123〉 and [0001] were observed with a predominance of the first type. Additionally, in
Publikováno v:
Semiconductor Science and Technology. 13:1341-1345
We report an in situ etching treatment of self-assembled InAs islands using in a molecular beam epitaxy system which allows reshaping and downsizing of the quantum dots with atomic layer precision. etching of a thin GaAs layer covering the InAs islan
Autor:
Yasufumi Yabuuchi, Makoto Shiojiri, Koji Nishio, J. Katcki, N. Y. Jin-Phillipp, Toshiyuki Isshiki
Publikováno v:
Scopus-Elsevier
Autor:
Karl Eberl, F. Noll, K. Syassen, Clemens Ulrich, F. Phillipp, N. Y. Jin-Phillipp, A. Kurtenbach
Publikováno v:
Journal of Electronic Materials. 25:395-400
We report on the growth of InP/GalnP islands on GaAs substrates by solidsource molecular beam epitaxy. It is shown by reflection high energy electron diffraction and atomic force microscopy that a rapid change from a twodimensional to a three-dimensi
Autor:
D. Lozano-Castelló, R. Kamalakaran, Fabio Lupo, Manfred Rühle, N. Y. Jin-Phillipp, Nicole Grobert
Publikováno v:
CARBON. 41(14)
Alumina (Al 2 O 3 )–carbon nanotube composite materials were synthesized by spraying a slurry of ferrocene (Fe(C 5 H 5 ) 2 ) and alumina in xylene, at 1000±50 °C, using argon (≤1.5 bar) as carrier gas. The as-prepared materials were formed in l
Autor:
N. Y. Jin-Phillipp, A. Black, Dubravko Babic, Wilfried Sigle, John E. Bowers, Manfred Rühle, E. L. Hu
The structure and composition of the interface of directly bonded GaAs and InP (001) wafers has been studied with various techniques in electron microscopy. For each interface three different dislocation networks have been identified and analyzed. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf13a34325d74b1c14f5e284ded9b410
https://doi.org/10.1063/1.1331068
https://doi.org/10.1063/1.1331068
Autor:
Zhenyu LiuPresent address: 848 Benedum Hall, Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA. E-mail: zyliume@gmail.com, Fax: +1-412-6248069, Tel: +1-412-6249095, Lijie Ci, N. Y. Jin-Phillipp, M. Rühle
Publikováno v:
Journal of Materials Chemistry; Oct2007, Vol. 17 Issue 43, p4619-4625, 7p