Zobrazeno 1 - 10
of 31
pro vyhledávání: '"N. W. Jang"'
Autor:
J. P. Knauer, C. K. Li, M. D. Barbero, Riccardo Betti, R. D. Petrasso, O. V. Gotchev, N. W. Jang
Publikováno v:
Journal of Fusion Energy. 27:25-31
A magneto-inertial fusion (MIF) approach to inertial confinement fusion (ICF), based on laser-driven magnetic-flux compression (LDFC) is described. This approach benefits from both the high-energy-density characteristic to ICF and the thermal insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634962bd0f114aaa94791064233bae5b
https://doi.org/10.1007/s10894-007-9112-3
https://doi.org/10.1007/s10894-007-9112-3
Autor:
Sagnmin Shin, N. W. Jang, Chel-Jong Choi, Jang Ho Lee, Suk-pil Kim, Si-Hyun Park, Youngsoo Park, June Key Lee, June-mo Koo, Young Su Chung
Publikováno v:
Integrated Ferroelectrics. 84:57-65
Surface smoothness and ferroelectric properties of PbZrxTi1-xO3 (PZT) thin films, grown by metal-organic chemical vapor deposition (MOCVD), was improved by applying Ir–Ru alloy electrode. It was found that the specific composition ratio of Ir and R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c752711f1484fd9972b87fa0ff0289cf
https://doi.org/10.1080/10584580601085214
https://doi.org/10.1080/10584580601085214
Autor:
S.Y. Lee, N. W. Jang, Kinam Kim, J.H. Park, Hyeon-Jin Kang, Yoon-Jong Song, S.K. Kang, H. H. Kim, H. J. Joo
Publikováno v:
Integrated Ferroelectrics. 61:97-103
The retention properties were improved by optimizing capacitor process and developing advanced integration process. The retention trends of ferroelectric capacitors before integration were systematically investigated as a function of critical process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c21cb127b9ddc6e36c650e6f7e106c76
https://doi.org/10.1080/10584580490458757
https://doi.org/10.1080/10584580490458757
Autor:
H. H. Kim, S.Y. Lee, Kinam Kim, Hyeon-Jin Kang, N. W. Jang, Yoon-Jong Song, H. J. Joo, J.H. Park
Publikováno v:
Integrated Ferroelectrics. 53:307-315
In order to manufacture high-density ferroelectric random access memory (FRAM) device, it is required to develop one mask capacitor etching technology, because it can provide greatly reduced cell size. However, as the capacitor size shrinks further,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60cc3140982d2404a9f024ec842c380d
https://doi.org/10.1080/10584580390258228
https://doi.org/10.1080/10584580390258228
Autor:
Hyeon-Jin Kang, H. J. Joo, J.H. Park, S.Y. Lee, N. W. Jang, Yoon-Jong Song, Kinam Kim, H. H. Kim
Publikováno v:
Integrated Ferroelectrics. 53:299-305
In the 0.25 μm FRAM technology generation, it is extremely difficult to define the hole-type cell via on very small top electrode area, because there is no process margin for the hole type cell via. Therefore, a runner via technology based on line-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5688273e176ad472d4829cdc223db327
https://doi.org/10.1080/10584580390258219
https://doi.org/10.1080/10584580390258219
Autor:
Kinam Kim, Yoon-Jong Song, Hyun-Ho Kim, N. W. Jang, Mun-Kyu Choi, Byung-Gil Jeon, Dong-Jin Jung, Byung-Jun Min, Sung-Yung Lee, H. J. Joo
Publikováno v:
IEEE Journal of Solid-State Circuits. 37:1472-1478
Nonvolatile 32-Mb ferroelectric random access memory (FRAM) with-a 0.25-/spl mu/m design rule was developed by using an address transition detector (ATD) control scheme for the application to SRAM and applying a common plate folded bit-line cell sche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93021d334c6435affbeb4491c84669ef
https://doi.org/10.1109/jssc.2002.802357
https://doi.org/10.1109/jssc.2002.802357
Autor:
N. W. Jang, Yoon-Jong Song, H. H. Kim, D. J. Jung, S.Y. Lee, Kinam Kim, Kyu-Mann Lee, Suk-Ho Joo, H. J. Joo, S.O. Park
Publikováno v:
Japanese Journal of Applied Physics. 41:2635-2638
Since the space margin between capacitors has been greatly reduced in 32 Mb high-density ferroelectric random access memory (FRAM) with a 0.25 µm design rule, considering the limitation of current etching technology, the stack height of ferroelectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1670606c41cfa6ca151b1f96fc4fa59
https://doi.org/10.1143/jjap.41.2635
https://doi.org/10.1143/jjap.41.2635
Publikováno v:
Integrated Ferroelectrics. 48:231-238
Ferroelectric capacitors are severely degraded by integrating interlayer dielectrics (ILD) and intermetallic dielectrics (IMD) due to their undesired hydrogen attack and stress effect. In this paper, it was found that the dielectrics film stress play
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a80b38d9ff1d07d432db2562a702bfc
https://doi.org/10.1080/713718320
https://doi.org/10.1080/713718320
Publikováno v:
Integrated Ferroelectrics. 48:119-126
As the capacitor size greatly decreases from 1.44 in 4Mb to 0.44 w m 2 in 32Mb FRAM, the hydrogen-damage is severely increased, thus giving rise to the difficulty in protecting the ferroelectric capacitor from the hydrogen attack by using conventiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa5b65946c58c7af385e17868c081a0c
https://doi.org/10.1080/10584580215436
https://doi.org/10.1080/10584580215436
Autor:
S.Y. Lee, Young-woo Song, N. W. Jang, H. H. Kim, D. J. Jung, C. J. Kim, June Key Lee, Kinam Kim
Publikováno v:
Integrated Ferroelectrics. 39:51-59
A ultraviolet (UV) process is commonly used in fabricating memory devices such as DRAM and SRAM without degrading the memory properties. However, in high density FRAM, the effect of UV light on ferroelectric properties has never been confirmed in rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8060d2219ad320a80a40f559f17cf0
https://doi.org/10.1080/10584580108011927
https://doi.org/10.1080/10584580108011927