Zobrazeno 1 - 5
of 5
pro vyhledávání: '"N. W. Cox"'
Publikováno v:
Applied Physics Letters. 41:1073-1075
Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption, electroreflectance, x‐ray diffraction, reflection electron diffraction, and Hall measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::948ac53a2a89730aae204545119b00e1
https://doi.org/10.1063/1.93405
https://doi.org/10.1063/1.93405
The design of a molecular beam epitaxial growth system for HgCdTe alloys is described and has been used to grow CdTe and HgCdTe layers. Investigations of the properties of these layers by reflection electron diffraction, u.v. reflectivity and X-ray d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba11f94d8a3c88e54c0c75047d49155
https://doi.org/10.21236/ada141574
https://doi.org/10.21236/ada141574
Publikováno v:
Technical Issues in Infrared Detectors and Arrays.
A molecular beam epitaxy (MBE) system designed for the growth of Hg l-xCdxTe alloys is described. The system is equipped with both binary (CdTe) and elemental Hg, Cd, and Te sources and has been used to grow epitaxial layers of CdTe and Hg 1-xCdxTe w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec50f920ad90f2c6e2c05592628f04a1
https://doi.org/10.1117/12.935728
https://doi.org/10.1117/12.935728
Publikováno v:
SPIE Proceedings.
An oxygen plasma assisted photoresist process has been developed to allow fabrication of reliable, high performance, low noise GaAs mixer diodes. Plasma tailoring of the photo-resist solved two critical processing problems. Plasma processing of the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40aa2cb8d0cb731ec4d35d9f6600175f
https://doi.org/10.1117/12.947848
https://doi.org/10.1117/12.947848
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 2:224
Preliminary results are presented of the growth of CdTe, HgTe and Hg1−xCdxTe layers with x‐values between 0.9 and 0.17 by molecular beam epitaxy (MBE). The growths were performed in a MBE system equipped with both binary (CdTe) and elemental Cd,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e7afa5e0672c367dded531559f74f5
https://doi.org/10.1116/1.582789
https://doi.org/10.1116/1.582789