A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels: A High Co-Integration Potential

Autor: R Wacquez, Antoine Cros, Robin Cerutti, Philippe Coronel, Damien Lenoble, Pascal Masson, F. Judong, Nicolas Loubet, S. Harrison, Thomas Ernst, B. Guillaumot, D. Fleury, D. Delille, Thomas Skotnicki, M.-P. Samson, Francois Leverd, N. Vuillet, J. Bustos, S. Borel, A. Pouydebasque

Publikováno v: International Conference on Solid State Devices and Materials (SSDM)
International Conference on Solid State Devices and Materials (SSDM), Sep 2006, Yokohama, Japan. pp.534-535

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7284a963ab5cf2bf945fae66433994a6
https://hal.science/hal-00525089

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