Zobrazeno 1 - 10
of 22
pro vyhledávání: '"N. Van Hoornick"'
Autor:
M.M. Heyns, Lars-Ake Ragnarsson, Wim Deweerd, Annelies Delabie, Luigi Pantisano, E. Rohr, Barry O'Sullivan, S. Van Elshocht, Vidya Kaushik, Tom Schram, N. Van Hoornick, Geoffrey Pourtois, S. De Gendt
Publikováno v:
IEEE Transactions on Electron Devices. 53:2627-2633
In this paper, an effective technique and methodology for the estimation of fixed charge components in high-k stacks was demonstrated by varying both the SiO2 and high-k dielectric thicknesses. The SiO2 thickness was scaled on a single wafer by unifo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0010080b0f933d6bbccda83f2f517877
https://doi.org/10.1109/ted.2006.882412
https://doi.org/10.1109/ted.2006.882412
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:423-428
Within the semiconductor industry, large volumes of hydrogen fluoride (HF) containing wastewaters need to be treated. This paper describes a technique that makes it possible to treat HF wastewater with virtually no waste production. A method based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1907cfd9ce4acd9e7419eadfbec54f2
https://doi.org/10.1109/tsm.2003.815624
https://doi.org/10.1109/tsm.2003.815624
Autor:
Vidya Kaushik, E. Rohr, M.M. Heyns, Barry O'Sullivan, Lars-Ake Ragnarsson, N. Van Hoornick, S. DeGendt, B. Onsia
Publikováno v:
IEEE Electron Device Letters. 27:546-548
A technique has been developed to fabricate transistors using a continuously scaled 0-2.5-nm SiO/sub 2/ interface layer between a silicon substrate and high-/spl kappa/ dielectric, on a single wafer. The transistor results are promising with good mob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e54b68d20fc3d24f460b1b383ce25fe
https://doi.org/10.1109/led.2006.876308
https://doi.org/10.1109/led.2006.876308
Autor:
B. Onsia, Barry O'Sullivan, Lionel Trojman, Vidya Kaushik, M.M. Heyns, N. Van Hoornick, S. DeGendt, L.-A. Ragnarsson, E. Rohr
Publikováno v:
ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference
ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.395-398, ⟨10.1109/ESSDER.2006.307721⟩
ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.395-398, ⟨10.1109/ESSDER.2006.307721⟩
A technique has been developed to fabricate transistors using a continuously scaled 0-2.5 nm SiO2 interface layer between a silicon substrate and high-κ dielectric on a single wafer. Transistor results are promising with good mobility values and dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0b9203852546b5d10ee8c2a204fbf3f
https://hal.archives-ouvertes.fr/hal-02952300
https://hal.archives-ouvertes.fr/hal-02952300
Publikováno v:
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130).
CMP has become a major process technology. As a result, high volumetric CMP waste streams containing suspended slurry particles and residues, polished from the wafer surface, are generated. This imposes severe demands on the treatment of these efflue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6faa7f532521161c84ca3577e496956c
https://doi.org/10.1109/issm.2000.993676
https://doi.org/10.1109/issm.2000.993676
Autor:
S. De Gendt, S. Van Elshocht, Annelies Delabie, Wim Deweerd, Christiaan Vinckier, N. Van Hoornick, Laura Nyns, Lou H. Hall, Thierry Conard, Marc Heyns
Publikováno v:
Journal of The Electrochemical Society. 153:F205
Growing nanometer-thin HfO 2 films by atomic layer deposition (ALD) for implementation in advanced transistor structures is controlled by the density of reactive OH sites on the surface. The impact of thin SiO 2 starting surfaces, grown by wet chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db44ef425303265059697e7699f01270
https://doi.org/10.1149/1.2220074
https://doi.org/10.1149/1.2220074
Autor:
J. W. Maes, H. Huotari, Thierry Conard, H. De Witte, Thomas Witters, Tom Schram, N. Van Hoornick, M.M. Heyns, J. Swerts, Chao Zhao, S. De Gendt
Publikováno v:
Journal of The Electrochemical Society. 153:G437
Nb(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced complementary metal oxide semiconductor devices. The NbN films were deposited at 400°C using NbCl 5 and NH 3 as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d8441354826e10d2993860fc2fee9aa
https://doi.org/10.1149/1.2181430
https://doi.org/10.1149/1.2181430
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