Zobrazeno 1 - 10
of 11
pro vyhledávání: '"N. V. Siglovaya"'
Autor:
A. S. Gusev, N. I. Kargin, S. M. Ryndya, G. K. Safaraliev, N. V. Siglovaya, M. O. Smirnova, I. O. Solomatin, A. O. Sultanov, A. A. Timofeev
Publikováno v:
Technical Physics. 66:869-877
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a151bcae1ea44784585934c50c5a3b5b
https://doi.org/10.1134/s1063784221060074
https://doi.org/10.1134/s1063784221060074
Autor:
G. K. Safaraliev, N. V. Siglovaya, S. M. Ryndya, A. O. Sultanov, N. I. Kargin, A. S. Gusev, A. A. Timofeev
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:280-284
Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::020443d423c9cf17ec532ee0f9df1428
https://doi.org/10.1134/s1027451019020083
https://doi.org/10.1134/s1027451019020083
Autor:
A. S. Gusev, N. I. Kargin, A. A. Timofeev, S. V. Antonenko, N. V. Siglovaya, S. M. Ryndya, M. M. Grekhov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:232-239
In this paper, submicron SiC thin films are obtained on α-Al2O3 (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0bc0c3193f453605006e332a395dc3c
https://doi.org/10.1134/s1027451019020101
https://doi.org/10.1134/s1027451019020101
Publikováno v:
Applied Surface Science. 523:146384
Optical glass–ceramic is a promising material for the elements of precision optical systems operating in a wide temperature range. However, conventional methods such as the chemical–mechanical or ion polishing do not allow to form a substrate sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6245031efb73dc062bc11e65d6d75ceb
https://doi.org/10.1016/j.apsusc.2020.146384
https://doi.org/10.1016/j.apsusc.2020.146384
Autor:
N. I. Kargin, G. K. Safaraliev, A. S. Gusev, A. O. Sultanov, N. V. Siglovaya, S. M. Ryndya, A. A. Timofeev
In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e115b3e62c75271a1d3d05dc1605d33
Autor:
S. A. Shostachenko, D. V. Sosin, A. P. Parhaeva, E. G. Losevskaya, O. E. Sharapova, N. V. Siglovaya, A. O. Sultanov, E. S. Bulycheva, E. A. Shuvalova, E. V. Maslovskaya, Y. R. Shaltaeva, M. A. Kulieva, D. I. Kadochnikov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 498:012042
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dcbd9ef2805b973a8a701514c2c66cb
https://doi.org/10.1088/1757-899x/498/1/012042
https://doi.org/10.1088/1757-899x/498/1/012042
Autor:
Ivan Komissarov, A. V. Avramchuk, N. I. Kargin, V. Yu. Fominski, N. V. Siglovaya, Vladimir Labunov, A. S. Gusev, R. I. Romanov, S. M. Ryndya, A. O. Sultanov, M. M. Mikhalik
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 475:012036
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48ecc658b4d565c43fd8a47fd78ca8e
https://doi.org/10.1088/1757-899x/475/1/012036
https://doi.org/10.1088/1757-899x/475/1/012036
Publikováno v:
Journal of Optical Technology. 72:693
This paper discusses how the cathodoluminescence intensity of europium-doped solid solutions of (YGd)2O3 in the range of accelerating voltages 300-1000 V depends on the energy and calculated values of the penetration depth of primary electrons into a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a14090a5c44b7a44d6fa9e711d4d36
https://doi.org/10.1364/jot.72.000693
https://doi.org/10.1364/jot.72.000693
Publikováno v:
Journal of Optical Technology. 72:688
This paper discusses how the cathodoluminescence luminosity of a submicron phosphor based on yttrium oxide depends on the annealing temperature. Increasing the annealing temperature from 1000 to 1400 °C increases the cathodoluminescence luminosity b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6372b1616376d029883e605893e09b2c
https://doi.org/10.1364/jot.72.000688
https://doi.org/10.1364/jot.72.000688
Autor:
A P Parhaeva, E S Bulycheva, D I Kadochnikov, M A Kulieva, E G Losevskaya, O E Sharapova, E A Shuvalova, E V Maslovskaya, D V Sosin, Y R Shaltaeva, A O Sultanov, N V Siglovaya, S A Shostachenko
Publikováno v:
IOP Conference Series: Materials Science & Engineering; Apr2019, Vol. 498 Issue 1, p1-1, 1p