Zobrazeno 1 - 9
of 9
pro vyhledávání: '"N. V. Rumak"'
Publikováno v:
Physica Status Solidi (a). 127:377-384
The anomalous mechanism of ionizing impurity atoms and stabilizing ions which are formed under the action of crystal lattice elastic forces is systematically studied. The possibility of the existence of the above mechanism is proved theoretically and
Autor:
T.N. Khatko, A. A. Suchodola, Vjacheslav Vladimirov Khatko, A. V. Stepanenko, N. V. Rumak, Alexander V. Alifanov
Publikováno v:
SPIE Proceedings.
The response of YBa2Cu3O7-x surface to the short laser pulse action has been studied. The glow spectrum-time characteristics have been defined at different laser pulse energies. The mechanisms of phase change induced by laser light influence on the h
Publikováno v:
SPIE Proceedings.
The growth kinetics, the structure, and the properties of films up to 25 nm thickness, obtained by thermal oxidation in dry oxygen of silicon substrates doped by phosphorus, are studied. It is shown that on a definite stage of oxidation, the anomalie
Autor:
N. V. Rumak, V. V. Khatko
Publikováno v:
Physica Status Solidi (a). 86:477-484
The paper contains a study of the structure and properties of 110 nm thick silicon dioxide films obtained by thermal oxidation of silicon in various atmospheres. The formation of one or another crystal phases in the oxides is explained on the basis o
Autor:
V. V. Khatko, N. V. Rumak
Publikováno v:
physica status solidi (a). 95:391-395
The interdependence is studied between the changing state of a solid solution of homogeneous structure in submicropores and the value of a fixed charge in thermal films of silica subjected to annealing. The results obtained support the conclusion abo
Autor:
N. V. Rumak, V. V. Khatko
Publikováno v:
physica status solidi (a). 96:19-24
The effect of a flux of metal particles and/or inert gas ions on phase transformations in the tran-sition region of thermal silica films is studied. The process is shown to be stimulated by the com-bined effect of static stresses parallel to the subs
Publikováno v:
Physica Status Solidi (a). 86:93-100
The growth kinetics and the structure of oxides, as well as the macrostresses and density of the fixed positive charge are studied in SiO2 films up to 50 nm thick, obtained by thermal oxidation in dry oxygen at T = 1373 K. At a certain stage of oxida