Zobrazeno 1 - 10
of 24
pro vyhledávání: '"N. V. Dikareva"'
Autor:
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveishchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin
Publikováno v:
Technical Physics. 66:1194-1199
Autor:
A. M. Andreev, Pavel A. Yunin, V. A. Kovalskiy, M. N. Drozdov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, N. V. Dikareva, O. V. Vikhrova, R. N. Kriukov, A. V. Kudrin, M. V. Ved
Publikováno v:
Semiconductors. 54:1059-1063
The properties of carbon layers produced on GaAs substrates by the pulsed laser sputtering of pyrolytic graphite in vacuum are studied. The optimal deposition temperature is 500°C; in this case, the growth rate of carbon layers is 0.19 nm s–1. The
Autor:
N. V. Dikareva, S. M. Nekorkin, N. V. Baidus, B. N. Zvonkov, Alexander A. Dubinov, I. V. Samartsev
Publikováno v:
Semiconductors. 53:1709-1711
The results of studying a GaAs-based laser with InGaAs waveguide quantum wells, which operates at room temperature in the electric-pumping mode, are presented. The minimal generation threshold is 15 A. Stable lasing at a wavelength of 1010 nm is atta
Publikováno v:
Microbiology. 88:72-78
Effect of low-frequency pulsed magnetic field and of low-intensity laser radiation on mycelial fungi actively degrading various polymer materials was studied. These factors had a different effect on spores of fungi and mycelia. Irradiation could stim
Autor:
N. V. Dikareva, Alexander A. Dubinov, V. Ya. Aleshkin, S. M. Nekorkin, I. V. Samartsev, I. J. Pashenkin, B. N. Zvonkov, A. B. Chigineva
Publikováno v:
Semiconductors. 52:1564-1567
The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technolog
Autor:
M. V. Dorokhin, P. B. Demina, Kirill S. Kabaev, Denis V. Khomitsky, Fernando Iikawa, M. A. G. Balanta, M. V. Ved, N. V. Dikareva, B. N. Zvonkov
The spin-memory effect in the GaAs / InGaAs heterostructures with $\delta$ layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to interaction with photogenerated spin-polarized holes. The investigati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54b1c62277dcca72dcd2a725e7c437c6
Autor:
B. N. Zvonkov, Dmitrii V. Ushakov, V. Ya. Aleshkin, S. M. Nekorkin, Alexander A. Dubinov, A. A. Afonenko, N. V. Dikareva
Publikováno v:
Quantum Electronics. 48:390-394
Autor:
O. V. Vikhrova, V. Ya. Aleshkin, Alexander A. Dubinov, B. N. Zvonkov, S. M. Nekorkin, N. V. Dikareva
Publikováno v:
Semiconductors. 51:1360-1363
The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum freq
Autor:
Alexander A. Dubinov, S. M. Nekorkin, D. A. Kolpakov, B. N. Zvonkov, I. V. Samartsev, N. V. Dikareva, V. Ya. Aleshkin
Publikováno v:
Semiconductors. 49:1571-1574
The optimization of InGaP/GaAs/InGaAs laser structures with tunnel-coupled waveguides with the aim of reducing the directivity diagram is presented. The width of the directivity diagram in the plane normal to the p–n junction is reduced to 28° in
Autor:
N. V. Dikareva, K. E. Kudryavtsev, Alexander A. Dubinov, B. N. Zvonkov, V. Ya. Aleshkin, S. M. Nekorkin
Publikováno v:
Semiconductors. 49:170-173
A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line