Výsledky vyhledávání - "N. V. Bazlov"

A Beta Spectrometer Based on Silicon Detectors

Autor: E. V. Unzhakov, S. V. Bakhlanov, A. V. Derbin, I. S. Drachnev, N. V. Bazlov, E. A. Chmel, D. A. Semenov, I. M. Kotina, N. V. Pilipenko, V. N. Muratova, V. K. Eremin

Publikováno v: Instruments and Experimental Techniques. 61:323-327

The characteristics of a beta spectrometer that consists of a total-absorption Si(Li) detector and a drift Si detector are presented. Using this spectrometer, it is possible to efficiently separate β radiation of nuclei from concomitant X and γ ray

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::922403937b8e5418595638a69b53c81f
https://doi.org/10.1134/s002044121803017x

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Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors

Autor: S V Bakhlanov, N V Bazlov, I D Chernobrovkin, A V Derbin, I S Drachnev, I M Kotina, O I Konkov, A M Kuzmichev, M S Mikulich, V N Muratova, M V Trushin, E V Unzhakov

Publikováno v: Journal of Physics: Conference Series. 2103:012139

Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated. The detectors were irradiated at room temperature up to a total number of the registered �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1efbbb42bfafd9e711163dcf9f58bd92
https://doi.org/10.1088/1742-6596/2103/1/012139

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Electrically Active Defects Induced by α‐Particle Irradiation in p‐Type Si Surface Barrier Detector

Autor: Denis V. Danilov, Irina Kotina, Maksim Mikulich, Ilia Drachnev, Alexander Derbin, Evgeniy Unzhakov, Artem Kuzmichev, Valentina Muratova, Sergey Bakhlanov, Ilia Chernobrovkin, Maxim Trushin, Oleg Konkov, N. V. Bazlov

Publikováno v: physica status solidi (a). 218:2100212

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::78a13e7f5f4993571976f34a8f1b41ec
https://doi.org/10.1002/pssa.202100212

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Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator

Autor: I. M. Kotina, M. S. Lasakov, N. V. Bazlov, I. S. Drachnev, M. V. Trushin, A. M. Danishevskii, E. V. Unzhakov, A. V. Derbin, A. M. Kuzmichev, O. I. Konkov

Publikováno v: Journal of Physics: Conference Series. 1697:012181

Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fix

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be4847dbfedb6d8c3fd071185063d01e
https://doi.org/10.1088/1742-6596/1697/1/012181

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A measurement method of a detector response function for monochromatic electrons based on the Compton scattering

Autor: N. V. Bazlov, V. N. Muratova, E. V. Unzhakov, A. V. Derbin, A.S. Kayunov, D. A. Semenov, S. V. Bakhlanov, I. S. Drachnev

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 821:13-16

In this paper we present a method of scintillation detector energy calibration using the gamma-rays. The technique is based on the Compton scattering of gamma-rays in a scintillation detector and subsequent photoelectric absorption of the scattered p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aedda6f4539702c7dd16cbe0bb636050
https://doi.org/10.1016/j.nima.2016.03.054

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Si(Li) detector with ultra-thin entrance window on the diffusive lithium side

Autor: O. I. Konkov, N. V. Bazlov, S. N. Abolmasov, E. V. Unzhakov, A. V. Derbin, E. I. Terukov, I. S. Drachnev, I. M. Kotina, N. V. Pilipenko, G. E. Gicharevich, E. A. Chmel

Publikováno v: Journal of Physics: Conference Series. 1400:055056

Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silico

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7eeaa24d6fa89dc2f12fec6548453f9b
https://doi.org/10.1088/1742-6596/1400/5/055056

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Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface

Autor: P. A. Sokolov, N. V. Bazlov, Oleg Vyvenko, Yu. V. Petrov, Nina A. Kasyanenko

Publikováno v: Applied Surface Science. 267:224-228

Light-induced fixation of DNA molecules on silicon surface was done and electro-physical properties of Schottky diodes with DNA on interfaces were investigated. Thymus DNA molecules were deposited on silicon from a water solution. Fixed molecular str

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0706d74379c65db082e0196e8f98a01
https://doi.org/10.1016/j.apsusc.2012.11.002

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Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

Autor: N. V. Bazlov, I. Kotina, Yu. V. Petrov, Evgeniy Ubyivovk, Oleg Vyvenko, N. Pilipenko, V. Mikhailovskii, Vyacheslav S. Zharinov

Publikováno v: AIP Conference Proceedings.

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::398777e0608592e030968c7b4d8efe18
https://doi.org/10.1063/1.4954356

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DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures

Autor: Oleg Vyvenko, Nina A. Kasyanenko, P. A. Sokolov, A. O. Puchkova, N. V. Bazlov

Publikováno v: Protection of Metals and Physical Chemistry of Surfaces. 47:566-571

DNA molecules immobilization on n-type single silicon was investigated. Electronic states were studied by measuring voltage-ampere characteristics (VAC) of Au-(n-Si) contacts with DNA molecules on the interface. It is showed that strong DNA fixation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e30dd0562dd75d5e611020545ec9e29
https://doi.org/10.1134/s2070205111050170

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