Výsledky vyhledávání - "N. V. Baidus"

Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field

Autor: P. A. Belevskii, V. N. Poroshin, N. V. Baidus, M. N. Vinoslavskii, V. V. Vainberg

Publikováno v: Low Temperature Physics. 46:633-638

The dependences of the current and integral intraband terahertz electroluminescence intensity on the electric field in the n-InGaAs/GaAs heterostructures with asymmetric double tunnel-coupled quantum wells under the conditions of bipolar lateral tran

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e785d3ae1ed1e62de8a25170cfcfe1a
https://doi.org/10.1063/10.0001248

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GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

Autor: N. V. Dikareva, S. M. Nekorkin, N. V. Baidus, B. N. Zvonkov, Alexander A. Dubinov, I. V. Samartsev

Publikováno v: Semiconductors. 53:1709-1711

The results of studying a GaAs-based laser with InGaAs waveguide quantum wells, which operates at room temperature in the electric-pumping mode, are presented. The minimal generation threshold is 15 A. Stable lasing at a wavelength of 1010 nm is atta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87e798acad801a568c9362ca4807f059
https://doi.org/10.1134/s1063782619160085

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Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate

Autor: A. V. Rykov, N. V. Baidus, D. A. Pavlov, S. A. Denisov, V. G. Shengurov, R. N. Kryukov, V. Yu. Chalkov, A. A. Sushkov

Publikováno v: Semiconductors. 53:1242-1245

A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al2O3(1 $$\bar {1}$$ 02) substrate is formed and studied. The Ge buffer layer is produced by the “hot wire” technique, whereas the III–V layers are grown by metal–organic vapor-phase epit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a120d105d708335701ea8084bae3efe
https://doi.org/10.1134/s1063782619090227

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Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

Autor: Alexander A. Dubinov, S. M. Nekorkin, K. E. Kudryavtsev, V. Ya. Aleshkin, N. V. Baidus, D. G. Reunov, A. V. Kruglov

Publikováno v: Semiconductors. 53:1138-1142

The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18cfdb7a2c37b1f3a3e3c4099fc493c0
https://doi.org/10.1134/s1063782619080037

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MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

Autor: D. G. Reunov, A. V. Kruglov, N. V. Baidus, V. A. Kukushkin, S. M. Nekorkin

Publikováno v: Semiconductors. 53:326-331

The properties of InGaAs/GaAs quantum dots (QDs) grown by MOS-hydride migration-stimulated epitaxy at a reduced pressure using submonolayer deposition are investigated. The wavelength of their photoluminescence at 300 K is in the range of 1.28–1.31

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3e9cad3d8cf25ade5d2a8ca311ee00d3
https://doi.org/10.1134/s1063782619030047

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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Autor: D. V. Yurasov, V. Ya. Aleshkin, N. V. Baidus, D. G. Reunov, A. V. Novikov, K. E. Kudryavtsev, S. M. Nekorkin, Z. F. Krasilnik, Mikhail Shaleev, A. V. Rykov, Alexander A. Dubinov, Pavel A. Yunin

Publikováno v: Semiconductors. 52:1547-1550

Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c80099f9dd1d6d8daacb987c20be8901
https://doi.org/10.1134/s1063782618120060

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Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate

Autor: N. V. Baidus, A. V. Rykov, I. V. Samartsev, B. N. Zvonkov, K. E. Kudryavtsev, O. V. Vikhrova, Alexander A. Dubinov, S. M. Nekorkin, V. Ya. Aleshkin, Z. F. Krasilnik, A. V. Novikov, D. V. Yurasov

Publikováno v: Technical Physics Letters. 44:735-738

A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca277fe5ad59ce306f2648ba6bf9a63b
https://doi.org/10.1134/s1063785018080175

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