Zobrazeno 1 - 10
of 88
pro vyhledávání: '"N. V. Abrosimov"'
Autor:
E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt, A. Laucht, A. S. Dzurak, J. J. Pla
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-6 (2022)
Abstract Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technolo
Externí odkaz:
https://doaj.org/article/61d4d4e2dc994abd8009f934f2ab5cf5
Publikováno v:
Physical Review Research, Vol 5, Iss 1, p 013182 (2023)
We measure the temperature dependence of the indirect band gap of isotopically purified ^{28}Si:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-da
Externí odkaz:
https://doaj.org/article/58e00cdd28c54d598f36d187e6cec1cd
Autor:
K. L. Litvinenko, Nguyen H. Le, B. Redlich, C. R. Pidgeon, N. V. Abrosimov, Y. Andreev, Zhiming Huang, B. N. Murdin
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Fano resonances occur in many platforms that have auto-ionizing states. Here the authors show that auto-ionizing states are not required for multi-photon Fano resonance in a Si:P system with significant screening by using a pump-probe method.
Externí odkaz:
https://doaj.org/article/c10323d3579f446e90ca3c64f0cf0a4b
Autor:
S. G. Pavlov, N. Deßmann, A. Pohl, R. Kh. Zhukavin, T. O. Klaassen, N. V. Abrosimov, H. Riemann, B. Redlich, A. F. G. van der Meer, J.-M. Ortega, R. Prazeres, E. E. Orlova, A. V. Muraviev, V. N. Shastin, H.-W. Hübers
Publikováno v:
APL Photonics, Vol 5, Iss 10, Pp 106102-106102-8 (2020)
Transient-type stimulated emission in the terahertz (THz) frequency range has been achieved from phosphorus doped silicon crystals under optical excitation by a few-picosecond-long pulses generated by the infrared free electron lasers FELIX and CLIO.
Externí odkaz:
https://doaj.org/article/cbca8294ca58479581a4e5c72b4baf60
Autor:
L. Bergeron, C. Chartrand, A. T. K. Kurkjian, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, S. Simmons
Publikováno v:
PRX Quantum, Vol 1, Iss 2, p 020301 (2020)
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface that possesses, simultaneously, long coherence lif
Externí odkaz:
https://doaj.org/article/5ee6aa1372e44efaad609a33924759e8
Autor:
S. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, H.-W. Hübers
Publikováno v:
Physical Review X, Vol 8, Iss 4, p 041003 (2018)
We report on an optically pumped laser where photons are simultaneously generated by population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (Si∶Bi). The medium utilizes three e
Externí odkaz:
https://doaj.org/article/509c33305b594fc48ac75ec24b73c20c
Autor:
B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, S. A. Lyon
Publikováno v:
Physical Review X, Vol 7, Iss 3, p 031002 (2017)
We achieve the strong-coupling regime between an ensemble of phosphorus donor spins in a highly enriched ^{28}Si crystal and a 3D dielectric resonator. Spins are polarized beyond Boltzmann equilibrium using spin-selective optical excitation of the no
Externí odkaz:
https://doaj.org/article/d8cc1e6ffd3740248f43cdeda75d0b7b
Autor:
S. G. Pavlov, N. Deßmann, V. N. Shastin, R. Kh. Zhukavin, B. Redlich, A. F. G. van der Meer, M. Mittendorff, S. Winnerl, N. V. Abrosimov, H. Riemann, H.-W. Hübers
Publikováno v:
Physical Review X, Vol 4, Iss 2, p 021009 (2014)
Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Γ_{8}^{+} → 1Γ_{7}^{−}, 1Γ_{6}^{−}, 4Γ_{8}^{−} intracen
Externí odkaz:
https://doaj.org/article/bd635cb1203142c1b881ae6866b7844b
Publikováno v:
Physical Review B. 107
Autor:
V. A. Gavva, O. Yu. Troshin, S. A. Adamchik, A. Yu. Lashkov, N. V. Abrosimov, A. M. Gibin, P. A. Otopkova, A. Yu. Sozin, A. D. Bulanov
Publikováno v:
Inorganic Materials. 58:246-251