Zobrazeno 1 - 10
of 29
pro vyhledávání: '"N. Tsikrikas"'
Autor:
N. Tsikrikas, George Kokkoris, George P. Patsis, Andreas G. Boudouvis, D. Drygiannakis, Evangelos Gogolides, Panagiotis Argitis, Ioannis Raptis
Publikováno v:
Microelectronic Engineering. 85:949-954
Experiments and simulations suggest that low-molecular-weight resist materials could result in low line-edge roughness (LER) which is a critical parameter for the forthcoming technology nodes. Two positive molecular resist architectures are modeled w
Publikováno v:
Applied Physics B: Lasers and Optics. 67:563-568
), deuterium (D2), and mixtures of hydrogen and helium (H2/He), versus Raman gas pressure and input pump energy of the pulsed Nd:YAG laser at 355 nm, are reported. Photon conversion efficiencies of 50% and 27% are achieved at the first Stokes lines (
Publikováno v:
Optics Communications. 134:145-148
A circuit and discharge simulation is presented for a TEA HF laser operating with a He/SF 6 /C 3 H 8 gas mixture. A comparison of the simulated discharge voltage, current, resistance and input power with the corresponding experimental results is pres
Publikováno v:
Journal of Physics D: Applied Physics. 29:2806-2810
The influence of the applied voltage pulse polarity on the performance of a HF laser pumped by a sliding surface discharge is investigated. Details are presented for the polarity dependence of the discharge properties as well as for their relation to
Publikováno v:
Scopus-Elsevier
The plasma electrode design concept is applied for the first time to an HF laser. The discharge along the surface of a dielectric (sliding discharge) is used as a plasma cathode for the main laser discharge. The laser operates at atmospheric pressure
Publikováno v:
SPIE Proceedings.
Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool w
Publikováno v:
SPIE Proceedings.
Strong candidate lithography for the mass production of devices at the 32nm technology node and beyond is extreme ultra violet lithography (EUVL). The mask used in EUVL is a complex set of layers. The material composition and thickness of each layer
Publikováno v:
2007 Digest of papers Microprocesses and Nanotechnology.
The effect of the number of layers of the Mo/Si structure and their relative thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the resist film for a EUV mask is investigated. Experimental
Autor:
Volker Wendel, Ute Jacobi, Jürgen Lademann, Heiner Gers-Barlag, Claudius Rapp, Christina Antoniou, Hans-Ju¨rgen Weigmann, Wolfram Sterry, George N. Tsikrikas
Publikováno v:
Journal of biomedical optics. 10(1)
Penetration profiles of topically applied drugs and cosmetic products provide important information on their efficacy. The application of tape stripping in combination with UV/VIS spectroscopy is checked to determine the local position of topically a
Autor:
Jürgen Lademann, A. Katsambas, U Lindemann, George N. Tsikrikas, Alex Stratigos, Wolfram Sterry, Christina Antoniou, H-J Weigmann
Publikováno v:
Skin pharmacology and applied skin physiology. 16(4)
The accurate determination of the mass of the horny layer removed by tape stripping is a decisive prerequisite for the application of this technique in penetration studies. A novel method using optical spectroscopy to determine the amount of stratum