Zobrazeno 1 - 10
of 98
pro vyhledávání: '"N. Tabatabaie"'
Publikováno v:
Iranian Journal of Public Health, Vol 30, Iss 1-2, Pp 21-26 (2001)
Slow Sand Filters are as a proper technology for pre-treatment of raw water, with a fine and medium trubidity in small communities in developing countries. Thus, with a minimum operation cost and minimum need for expest bodies have the maximum effici
Externí odkaz:
https://doaj.org/article/4a9eb677eda645338d436ded873a6301
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:606-615
The axial and lateral spontaneous emission intensities from vertical-cavity laser diodes have been studied both experimentally and theoretically. The measurements show that spontaneous emission from the cavity perimeter (lateral emission) is overwhel
Publikováno v:
IEEE Journal of Quantum Electronics. 30:2500-2506
We discuss the dynamics of transverse mode competition in an etched air-post vertical-cavity laser diode under dc excitation using an annular ring contact as a spatial filter. Distinct regions of operation are found for various ranges of fixed bias c
Autor:
J. P. Harbison, L. T. Florez, Timothy D. Sands, H. L. Gilchrist, N. Tabatabaie, W.K. Chan, V. G. Keramidas, T.L. Cheeks
Publikováno v:
Surface Science. 228:1-8
We describe the molecular beam epitaxial growth of NiAl metallic quantum wells as thin as 1 nm buried in III–V semiconductor heterostructures with emphasis on the growth conditions that yield monocrystalline NiAl films with atomically abrupt interf
Autor:
Ramamoorthy Ramesh, Chris Palmstrom, Timothy D. Sands, Yaron Silberberg, T.L. Cheeks, N. Tabatabaie, J. P. Harbison, V. G. Keramidas
Publikováno v:
Materials Science Reports. 5:99-170
Long before the advent of nanofabrication and quantum-effect devices, the technological limitations imposed by polycrystalline, multiphase and thermally unstable contacts to III-V semiconductors were of concern to forward-looking materials scientists
Autor:
Lawrence W. Shacklette, N. Tabatabaie, Jason Holman, H. Guckel, Stephen M. Emo, Robert A. Norwood
Publikováno v:
Applied Physics Letters. 73:3187-3189
A micro-optoelectromechanical switch that combines microactuator technology developed via the Lithographie Galvanformung Abformung process with lithographically defined polymeric alignment elements is described. The multimode optical switch achieves
Autor:
Timothy D. Sands, H. L. Gilchrist, N. Tabatabaie, V. G. Keramidas, L. T. Florez, T.L. Cheeks, J. P. Harbison
Publikováno v:
International Technical Digest on Electron Devices Meeting.
The realization of a buried metal electrode tunneling transistor is reported. The device is fabricated in an epitaxial monocrystalline (Al,Ga)As-NiAl-(Al,Ga)As semiconductor-metal-semiconductor heterostructure and uses the thinnest buried electrode e
Autor:
H. L. Gilchrist, Chris Palmstrom, K.C. Garrison, F. DeRosa, N. Tabatabaie, S. Mounier, G. W. Hull, S.J. Allen, Timothy D. Sands
Publikováno v:
Surface Science. 228:13-15
Magneto-transport measurements have been performed on epitaxial layers of ErAs buried inside insulating GaAs with thicknesses from 15 nm (bulk like) to 0.7 nm (quantum confined). Magneto-transport in bulk like layers is consistent with a low density
Autor:
T.L. Cheeks, R. E. Nahory, B. Wilkens, J. P. Harbison, H. L. Gilchrist, N. Tabatabaie, V. G. Keramidas, Timothy D. Sands
Publikováno v:
Applied Physics Letters. 56:1043-1045
Current‐voltage, capacitance‐voltage, and internal photoemission measurements of back‐to‐back Schottky diodes of buried metal (Al,Ga)As/NiAl/(Al,Ga)As double heterostructures grown by molecular beam epitaxy are reported. By using a selective
Autor:
T. Zhang, D. L. Wokosin, K. D. Choquette, R. E. Leibenguth, J. W. Long, D. A. Richie, N. Tabatabaie
Publikováno v:
Optical Society of America Annual Meeting.
An important figure of merit for the design of low threshold vertical-cavity surface-emitting lasers is the spontaneous emission factor. It is defined as the ratio of the optical energy coupled to modes near the fundamental cavity mode to the total r