Zobrazeno 1 - 6
of 6
pro vyhledávání: '"N. T. Pavlovska"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 1, Pp 14-20 (2018)
By the method of chemical transport reactions in the closed halogen system Si-Au-Pt-B-Br, whiskers Si1-xGex x = 0.01-0.08 of transverse dimensions 0.1-100 μm were grown. Structural and magnetic properties of the obtained crystals are investigated. T
Externí odkaz:
https://doaj.org/article/7b817406d9ff4c82b2b0689e40157f4d
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 2, Pp 185-189 (2019)
The article deals with the filamentous Si0,97Ge0,03 crystals with transverse dimensions of 40 ± 2 μm grown by the method of chemical transport reactions in the closed bromide system using gold as a growth initiator. The focus of research was the in
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 1, Pp 14-20 (2018)
By the method of chemical transport reactions in the closed halogen system Si-Au-Pt-B-Br, whiskers Si1-xGex x = 0.01-0.08 of transverse dimensions 0.1-100 μm were grown. Structural and magnetic properties of the obtained crystals are investigated. T
Autor:
P. G. Litovchenko, I. Ostrovskii, Anatoly Druzhinin, N. T. Pavlovska, Yu.O. Ugrin, Yu.V. Pavlovskyy, Yu. Khoverko, Krzysztof Rogacki
Publikováno v:
Journal of Magnetism and Magnetic Materials. 393:310-315
The effect of 8.6·1017 n/cm2 fast neutron irradiation on the magnetic susceptibility and magnetoresistance of Si whiskers with impurity concentration near metal–insulator transition (MIT) has been studied. Neutron irradiated specimens with boron c
Autor:
A. A. Druzhinin, V. M. Tsmots, N. T. Pavlovska, Yu.V. Pavlovskyy, A. Ya. Karpenko, I. P. Ostrovskyy, Yu. Khoverko, P.G. Litovchenko
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 7, № 4 (2010); 5-8
Сенсорная электроника и микросистемные технологии; Том 7, № 4 (2010); 5-8
Сенсорна електроніка і мікросистемні технології; Том 7, № 4 (2010); 5-8
Сенсорная электроника и микросистемные технологии; Том 7, № 4 (2010); 5-8
Сенсорна електроніка і мікросистемні технології; Том 7, № 4 (2010); 5-8
The impact of proton irradiation and high magnetic field on the electroconductivity and magnetoresistance of Si1-xGex (õ = 0,03) whiskers with resistance of ρ = 0,008–0,025 Ohm∙cm in the temperature range of 4,2–300 Ê.is studied. It is fount
Publikováno v:
Semiconductors. 44:623-627
The magnetic susceptibilities of Si and Si0.95Ge0.05 alloy whiskers of different diameters have been studied. Its significant difference from the magnetic susceptibility of a bulk material has been found. The presence of paramagnetic centers, some of