Zobrazeno 1 - 10
of 31
pro vyhledávání: '"N. T. Kvasov"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 6, Pp 5-13 (2022)
In this paper, the main radiative processes, for the first time, are considered within the framework of continuum physics, where the motion of charged particles occurs in a continuous resisting medium.Within the analysis, new characteristics of the i
Externí odkaz:
https://doaj.org/article/706d1846a91e45188a39e6f3fa40109c
Autor:
V. V. Uglov, N. T. Kvasov, V. M. Astashynski, Yu. A. Petukhou, A. M. Kuzmitski, I. L. Doroshevich, S. B. Lastovski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 21-25 (2019)
Photovoltaic effect in silicon doped by the action of compression plasma pulses is investigated for the first time. Plasma treatment parameters providing maximum values of photo-emf are optimized. Dependences of photo-emf on the dose of electron high
Externí odkaz:
https://doaj.org/article/3d9c809346d245488d0377e3a1ec9beb
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 5-10 (2019)
The work is devoted to clarify the physical nature of the threshold energy of shift Ed - one of the most important characteristics of the radiation resistance of materials.Physical object, on which physical and mathematical formalism Ed is constructe
Externí odkaz:
https://doaj.org/article/97b01c531eb542b3a299789e8dac0d36
Publikováno v:
Doklady of the National Academy of Sciences of Belarus. 65:275-280
The principles of formation of the complex vacancy defects (V-clusters), their ensembles and patterns of formation of superlattices of the V-clusters are determined. The inclusion of the drift component of the elementary defects into the field of ela
Publikováno v:
Russian Physics Journal. 63:2219-2225
The paper focuses on the void swelling processes in materials subjected to radiation, that occur due to the formation of the void ensemble in the crystal lattice. According to the theoretical analysis of the kinetics and the pore size distribution wi
Publikováno v:
Russian Physics Journal. 62:687-690
Dissipation of the kinetic energy of accelerated charged particles during their motion in the material causes its response to the external radiation effect, which, in turn, can significantly affect the kinetics of mass transfer. The effect of the ele
Autor:
N. T. Kvasov, Vladimir V. Uglov, V.I. Shymanski, Tatyana A. Kuznetsova, K. A. Sudzilovskaya, V. A. Lapitskaya, Sergei A. Chizhik, T. I. Zubar
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:408-411
The results of studying the roughness, microhardness, and elasticity modulus of AlSiN films with a thickness of 300 nm in the initial state and after thermal annealing at a temperature of 600–900°C in vacuum and at 400–1000°C in air are present
Autor:
Gregory Abadias, I.A. Saladukhin, S.V. Zlotski, N. T. Kvasov, Vladimir V. Uglov, A.A. Malashevih
Publikováno v:
Surface and Coatings Technology. 355:311-317
The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers un
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:1165-1169
The results of investigating the microstructure and phase composition of AlN/SiNx multilayer films with alternating nanocrystalline aluminum nitride (nc-AlN) and amorphous silicon nitride (a-SiNx) phases, which were formed via magnetron sputtering, a
Autor:
I.A. Saladukhin, I. V. Safronov, V.I. Shymanski, G. E. Remnev, Vladimir V. Uglov, N. T. Kvasov, N.N. Dorozhkin
Publikováno v:
Computational Materials Science. 143:143-156
The research of defect formation and clusterization processes by means of a molecular dynamics method both in nc-TiN nanocrystals and amorphous a-Si3N4 matrix, as the constituents of nc-TiN/a-Si3N4 nanocomposite, under exposure to Xe implantation was