Zobrazeno 1 - 10
of 39
pro vyhledávání: '"N. T. Gurin"'
Publikováno v:
Russian Microelectronics. 42:373-377
A combined threshold position-sensitive photoswitch with an S-shaped volt-ampere characteristic is proposed. It is shown that the voltage switch-on of this element depends on the spatial position of the light beam on its surface. The results of the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f0ddfd80fe121a0d42b569ac24a425
https://doi.org/10.1134/s1063739712070086
https://doi.org/10.1134/s1063739712070086
Publikováno v:
Technical Physics. 57:74-77
It is shown that nitrogen-laser excited (2CaO · m(Al2O3) · SiO2): Eu photoluminescent phosphors obtained by direct solid-state synthesis at 1350°C emit white, green, and yellow lights when Al2O3 content m in the system decreases from 0.40 to 0.05.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c434b27e4315da512597ef010a8a55fa
https://doi.org/10.1134/s1063784212010124
https://doi.org/10.1134/s1063784212010124
Publikováno v:
Russian Microelectronics. 40:453-456
The method of the implementation of built-in protection of bipolar transistors from the current overloads in the controlling circuit based on the combination of an element with an N-shaped IVC with the bipolar transistor is considered. The use of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bfa80c14412f40cb3be72aeed60bc1
https://doi.org/10.1134/s1063739711070146
https://doi.org/10.1134/s1063739711070146
Publikováno v:
Semiconductors. 44:498-507
Distributions of the density of occupied surface electron states at the cathode interface between the insulator and phosphor in thin-film electroluminescent emitters are simulated in relation to the energy on the basis of experimental data. The depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba7a124d8f99be98c162712cc74a10d
https://doi.org/10.1134/s1063782610040160
https://doi.org/10.1134/s1063782610040160
Publikováno v:
Technical Physics Letters. 36:26-30
The energy distribution of the density of occupied surface states (Nss) at the cathode insulatorphosphor interface in ZnS:Mn electroluminescent thin-film (ELTF) emitters has been modeled on the basis of experimental data. Changes in this distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87274a43e19749d4e85bf238ee52ddf7
https://doi.org/10.1134/s1063785010010098
https://doi.org/10.1134/s1063785010010098
Publikováno v:
Technical Physics Letters. 35:705-709
Phosphors of the (CaO-Al2O3-SiO2):Eu system obtained by direct solid-state synthesis in air at 1300°C produce broadband photoluminescence (PL) covering the entire visible range under excitation by a nitrogen laser. Upon vacuum annealing, the PL inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03958ee0cb09d860e9126edb9f20dfed
https://doi.org/10.1134/s1063785009080069
https://doi.org/10.1134/s1063785009080069
Autor:
N. T. Gurin, O. Yu. Sabitov
Publikováno v:
Semiconductors. 42:675-688
Results of experimental study of decay of the current flowing through a thin-film electroluminescent MISIM structure indicate a bimolecular process of electron capture by the surface states of the anode interface. A two-stage model of the process is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55a2bdd51baab797c4b326471e754366
https://doi.org/10.1134/s1063782608060080
https://doi.org/10.1134/s1063782608060080
Autor:
O. Yu. Sabitov, N. T. Gurin
Publikováno v:
Technical Physics Letters. 34:278-281
We have experimentally studied the decay of a current transferred via a phosphor layer in ZnS:Mn thin-film electroluminescent emitters. It is established that this decay is controlled by a bimolecular process of electron trapping on the surface state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263f735e17432fc29eacfe125a9b0341
https://doi.org/10.1134/s1063785008040032
https://doi.org/10.1134/s1063785008040032
Publikováno v:
Semiconductors. 40:920-933
The errors in determining the depth of the surface-state levels of the insulator-phosphor cathode interface, the width of the potential barrier, and the probability of electron tunneling from the surface states are analyzed using the numerical simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f64dc85b3ed69803d0319bf55e26239
https://doi.org/10.1134/s1063782606080112
https://doi.org/10.1134/s1063782606080112
Autor:
N. T. Gurin, O. Yu. Sabitov
Publikováno v:
Technical Physics. 51:1012-1024
A new technique is suggested that makes it possible to determine the probability of radiative recombination of impact-excited Mn2+ luminescence centers, as well as to find the time dependences of the electron multiplication factor, impact ionization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3972681e885876a2ac3c33f9238875d
https://doi.org/10.1134/s106378420608010x
https://doi.org/10.1134/s106378420608010x