Zobrazeno 1 - 10
of 12
pro vyhledávání: '"N. T. Gorbachuk"'
Publikováno v:
Lasers in Manufacturing and Materials Processing. 1:21-35
Radiation of a KrF-laser (λ=248 nm) was used for the synthesis by reactive pulsed laser deposition (RPLD) of nanometric iron oxide (Fe2O3-X (0≤×≤1)) films with variable thickness, stoichiometry and electrical properties. Film deposition was car
Autor:
Gabriel Socol, Carmen Ristoscu, S.A. Mulenko, Marcela Socol, N. Stefan, Yu. N. Petrov, C. N. Mihailescu, Ion N. Mihailescu, N. T. Gorbachuk, N. Serban
Publikováno v:
Materials Research Bulletin. 50:148-154
KrF* excimer laser pulses of 248 nm were used for the synthesis of nanometric iron oxide films with variable thickness, stoichiometry and electrical properties. Film deposition was carried out on Si and SiO 2 substrates. The number of laser pulses wa
Publikováno v:
Applied Surface Science. 258:9186-9191
Ultraviolet photons of KrF-laser (248 nm) and of photodiode (360 nm) were used for the synthesis of iron oxide thin films with variable thickness, stoichiometry and electrical properties. The reactive pulsed laser deposition (RPLD) method was based o
Autor:
N. T. Gorbachuk, S.A. Mulenko
Publikováno v:
Applied Physics B. 105:517-523
Iron oxide films were deposited on Si substrates by reactive pulsed laser deposition (RPLD) using a KrF laser (248 nm). These films were deposited too by laser (light) chemical vapor deposition (LCVD) using continuous ultraviolet photodiode radiation
Structural, electrical, and optical characterizations of laser deposited nanometric iron oxide films
Autor:
A. M. Korduban, A. P. Caricato, Armando Luches, Gilberto Leggieri, Daniele Valerini, Paolo Mengucci, N. T. Gorbachuk, S.A. Mulenko
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:295-300
The structural, electrical, and optical characteristics of nanometric Fe2O3−x films fabricated on ⟨100⟩ Si and SiO2 substrates by ablating an iron target with a KrF excimer laser in low pressure (0.05–1.0 Pa) O2 atmosphere are reported. The t
Autor:
Evie L. Papadopoulou, N. T. Gorbachuk, Y. V. Kudryavtsev, Anna Paola Caricato, F. Romano, Armando Luches, R. Klini, Costas Fotakis, S.A. Mulenko
Thin films were deposited by KrF laser ablation of CrSi2 and β-FeSi2 targets with the aim to obtain silicide thin films and layers with narrow band gap for sensor applications. The CrSi2-based films exhibit both semiconductor and metal properties, d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9306bcaa33a6bb7e85c3eb003f331296
https://hdl.handle.net/11587/333303
https://hdl.handle.net/11587/333303
Publikováno v:
Journal of Laser Applications. 28:042006
Photons of a KrF laser (248 nm) were used for the synthesis of Cr3−XO3−Y/Fe2O3−X two dimensional (2D) multilayer heterostructures by reactive pulsed laser deposition. Each nanometric multilayer heterostructure with a definite number of layers o