Zobrazeno 1 - 10
of 33
pro vyhledávání: '"N. Sukhaseum"'
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5676a341371b115a902117a135690ba
https://doi.org/10.1109/radecs50773.2020.9857681
https://doi.org/10.1109/radecs50773.2020.9857681
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65540d44acf33388a6dcd20b45641a5f
https://doi.org/10.1109/radecs50773.2020.9857726
https://doi.org/10.1109/radecs50773.2020.9857726
Autor:
Laurent Artola, P. Caron, N. Sukhaseum, Francoise Bezerra, Christophe Inguimbert, N. Chatry, Robert Ecoffet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2018, 65 (8), pp.1759-1767. ⟨10.1109/TNS.2018.2819421⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2018, 65 (8), pp.1759-1767. ⟨10.1109/TNS.2018.2819421⟩
International audience; With the increase of sensitivity of devices to single-event upsets (SEUs), the possibility to trigger an upset with incident electrons has been recently raised. All the mechanisms susceptible to trigger the SEUs are investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31b1db0e9e04cf397f7c758117066a12
https://doi.org/10.1109/tns.2018.2819421
https://doi.org/10.1109/tns.2018.2819421
Akademický článek
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Autor:
C. Boatella Polo, Athina Varotsou, Robert Ecoffet, N. Chatry, L. Salvy, Francoise Bezerra, G. Augustin, Maris Tali, N. Sukhaseum, B. Vandevelde
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c944538cc7f5a2e16a1db6a7b28e47
https://doi.org/10.1109/radecs45761.2018.9328721
https://doi.org/10.1109/radecs45761.2018.9328721
Autor:
L. Gouyet, Robert Ecoffet, P. Pourrouquet, A. Samaras, Francoise Bezerra, N. Chatry, Eric Lorfevre, N. Sukhaseum, B. Vandevelde
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3055-3060
This paper presents the single-event upset characterization of a commercial field programmable gate array (FPGA) using electron radiation. FPGA radiation test results under high energy electrons are described and the dependence between electron energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::257ece9f2e7bc9022d4ba9eca8788853
https://doi.org/10.1109/tns.2014.2367544
https://doi.org/10.1109/tns.2014.2367544
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Low energy protons can induce Single Event Upsets in highly integrated memories. The direct ionization phenomenon has been observed for technology nodes lower than 90 nm. The Single Event Upset rate calculation is usually performed with an isotropic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3757551428d2900e54db8688d5dd4550
https://doi.org/10.1109/radecs.2017.8696135
https://doi.org/10.1109/radecs.2017.8696135
Autor:
J. Guillermin, Athina Varotsou, M. Vaille, N. Sukhaseum, Christian Poivey, Jean-Charles Thomas, N. Chatry, A. Privat, P. Garcia
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Process-induced variability between parts and lots is a critical issue for space applications and Radiation Hardness Assurance (RHA). The one-sided tolerance limit method is commonly used to take this variability into account. This study explores the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be8d74f3890a6a6c5fcf3b5730c4ba83
https://doi.org/10.1109/radecs.2016.8093124
https://doi.org/10.1109/radecs.2016.8093124
Autor:
J. Guillermin, David Dangla, A. Rousset, L. Gouyet, R. Gaillard, Eric Lorfevre, N. Chatry, N. Sukhaseum, B. Vandevelde
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The work presented here investigates the impact of multiple write cycles on NAND Flash memory radiation sensitivity. Cobalt 60 tests have been performed in order to study the memory array data corruption evolution with respect to the TID level. Heavy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49dffe955ca38a314ae4a3c53b19b36b
https://doi.org/10.1109/radecs.2016.8093109
https://doi.org/10.1109/radecs.2016.8093109
Autor:
Fabien Widmer, R. Marec, Michele Muschitiello, Francoise Bezerra, Jeffrey L. Titus, Veronique Ferlet-Cavrois, Robert Ecoffet, Max Zafrani, N. Sukhaseum, L. Gouyet, S. Liu, Marc Marin, Phillip Sherman
Publikováno v:
IEEE Transactions on Nuclear Science. 59:1125-1129
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f61e037f350aa1b5bfb60d2b5457fe3d
https://doi.org/10.1109/tns.2011.2177863
https://doi.org/10.1109/tns.2011.2177863