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(INVITED) Deep-submicron digital CMOS potentialities for millimeter-wave applications

Autor: Andreia Cathelin, Didier Belot, N. Seller, Frederic Gianesello, Christine Raynaud, Baudouin Martineau

Publikováno v: 2008 IEEE Radio Frequency Integrated Circuits Symposium.

This paper presents the potentialities of deep submicron CMOS technologies for millimeter-wave applications. The target applications are firstly overviewed. Then, the nanometer bulk and SOI CMOS technology offer is presented, presenting integration s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0f72f10167c31c556f490caf8f94fd7
https://doi.org/10.1109/rfic.2008.4561384

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Design for millimeter-wave applications in silicon technologies

Autor: J.P. Schoellkopf, N. Seller, S. Pruvost, Baudouin Martineau, Frederic Gianesello, Ali M. Niknejad, C. Raynaud, Sorin P. Voinigescu, J. Gorisse, S. Montusclat, Didier Belot, Andreia Cathelin, S. Douyere

Publikováno v: ESSCIRC

This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the target applications in these frequency bands are presented: from automotive cruise control radars to wireless links. Then,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e35ec6630d0908e5d4605af1915a79fa
https://doi.org/10.1109/esscirc.2007.4430343

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A 10GHz Distributed Voltage Controlled Oscillator for WLAN Application in a VLSI 65nm CMOS Process

Autor: Jean-Baptiste Begueret, N. Seller, Didier Belot, Andreia Cathelin, Hervé Lapuyade, E. Chataigner

Publikováno v: Radio Frequency Integrated Circuits (RFIC) Symposium
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, Honolulu, United States. pp.115-118

This work demonstrates the feasibility of a distributed voltage controlled oscillator (DVCO) designed for WLAN applications in a 65 nm CMOS process with standard VLSI backend. This DVCO achieves a tuning range of 1.1 GHz (from 10.6 GHz to 11.7 GHz) a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e6f567c93dfd2b3ac3119f7328f2c98
https://hal.archives-ouvertes.fr/hal-00185010

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A 4mA, 0.25 SiGe, 23GHz BiFET Low Noise Amplifier

Autor: Yann Deval, Hervé Lapuyade, Thierry Taris, N. Seller, Jean-Baptiste Begueret, R. Toupe

Publikováno v: IEEE International Conference on Electronics, Circuits and Systems, 2006. ICECS '06
IEEE International Conference on Electronics, Circuits and Systems, 2006. ICECS '06, Dec 2006, Nice, France. pp.1019-1022
ICECS

The full aspects of a 23 GHz BiFET LNA implementation are reported in this work. Integrated in a 0.25 mum BiCMOS technology, the circuit exhibits a 14 dB gain at 22.8 GHz for a 4 mA current consumption under 2.5 V. S11 and S22 parameters are less tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f19a095275a5f26fe50e1f42534e112
https://hal.archives-ouvertes.fr/hal-00178594

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A Distributed Voltage Controlled Oscillator in a standard 65nm CMOS Process

Autor: Jean-Baptiste Begueret, Hervé Lapuyade, E. Chataigner, N. Seller

Publikováno v: Proceedings of the 2006 Ph.D Research in Microelectronics and Electronics conference (PRIME 2006)
2006 Ph.D Research in Microelectronics and Electronics conference (PRIME 2006)
2006 Ph.D Research in Microelectronics and Electronics conference (PRIME 2006), Jun 2006, France. pp.93-96

This paper presents the design of a distributed voltage controlled oscillator (DVCO). This oscillator has been designed in a low-cost low-power standard STMicroelectronics 65nm CMOS process. The DVCO achieves a tuning range from 9.6GHz to 11.6GHz, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8972119741d340299f771708e5f1bb09
https://doi.org/10.1109/rme.2006.1689904

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