Zobrazeno 1 - 10
of 116
pro vyhledávání: '"N. Saucedo-Zeni"'
Autor:
Wu, Yudi1,2 (AUTHOR), He, Fangxun1 (AUTHOR), Liu, Liang1 (AUTHOR), Jiang, Wei1 (AUTHOR), Deng, Jiao1 (AUTHOR), Zhang, Yujie2 (AUTHOR), Cao, Zhixin1,2 (AUTHOR), Xu, Xiangshang1,2 (AUTHOR) xsxu@tjh.tjmu.edu.cn, Gong, Jianping1,2 (AUTHOR) jpgong@tjh.tjmu.edu.cn
Publikováno v:
Cancer Medicine. Nov2024, Vol. 13 Issue 21, p1-10. 10p.
Autor:
Zhan, Li1,2 (AUTHOR), Edd, Jon1,3 (AUTHOR) jedd@mgh.harvard.edu, Mishra, Avanish1,2,3 (AUTHOR), Toner, Mehmet1,2,4 (AUTHOR) mtoner@mgh.harvard.edu
Publikováno v:
Advanced Science. 10/28/2024, Vol. 11 Issue 40, p1-14. 14p.
Publikováno v:
Japanese Journal of Applied Physics. 42:L410-L413
We report the effects of the exposure of homoepitaxially grown GaAs buffer layers to high temperature with no As overpressure on the InAs growth front. It was observed that after using this thermal treatment the InAs bidimensional growth was preserve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b2297ccb0f577da02abe22766c57394
https://doi.org/10.1143/jjap.42.l410
https://doi.org/10.1143/jjap.42.l410
Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots
Autor:
N. Saucedo-Zeni, Máximo López-López, Víctor Hugo Méndez-García, Luis Zamora-Peredo, A. Perez-Centeno
Publikováno v:
Journal of Crystal Growth. 251:236-242
We employed a Si interlayer to drive a 2D-3D transition in the GaAs/AlGaAs system. We have found that self-assembled GaAs quantum dots can be obtained by this technique. The samples were prepared in a Riber 32P MBE system employing undoped SI-GaAs[10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2df57c1fb3c0737d98065c68ed5e6a0c
https://doi.org/10.1016/s0022-0248(02)02381-3
https://doi.org/10.1016/s0022-0248(02)02381-3
Autor:
A. Lastras-Martínez, A.Yu. Gorbatchev, R. E. Balderas-Navarro, C.I. Medel-Ruiz, V.H. Méndez-García, N. Saucedo-Zeni, Luis Zamora-Peredo
Publikováno v:
Journal of Crystal Growth. 251:201-207
We investigated the effects induced by Si during self-assembled InAs quantum dots growth by molecular beam epitaxy on GaAs (1 0 0) substrates. The GaAs surface was exposed at high substrate temperatures to Si molecular flux for a few seconds. Samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ac7af3a54a69d327de7e01f84fbc22
https://doi.org/10.1016/s0022-0248(02)02311-4
https://doi.org/10.1016/s0022-0248(02)02311-4
Autor:
V.H. Méndez-García, Máximo López-López, Luis Zamora-Peredo, A. Lastras-Martínez, A. Perez-Centeno, N. Saucedo-Zeni
Publikováno v:
Scopus-Elsevier
A new method to obtain self-assembled GaAs quantum dots is presented. In this method, one monolayer (ML) of Si is pseudomorphically grown on an AlGaAs layer by molecular beam epitaxy. The subsequent GaAs overgrowth proceeds in a three dimensional (3D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cea64230db46202b8332c0e724cbe60b
https://doi.org/10.1143/jjap.41.l916
https://doi.org/10.1143/jjap.41.l916
Autor:
Luis Zamora-Peredo, A.Yu. Gorbatchev, V.H. Méndez-García, C.I. Medel-Ruiz, N. Saucedo-Zeni, A. Lastras-Martínez
Publikováno v:
International Conference on Molecular Bean Epitaxy.
Summary form only given. Semiconductor quantum dot (QDs) structures have received increasing attention over the last few years because they are expected to lead to significant improvements in optical and electronic device applications. Nowadays, all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35ea1df20d5e75f6d482206dc01efe23
https://doi.org/10.1109/mbe.2002.1037912
https://doi.org/10.1109/mbe.2002.1037912
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:1503
We report improvement in the uniformity of InAs quantum dot (QD) arrangements grown on GaAs(100) surfaces by molecular beam epitaxy. GaAs surfaces were subjected to annealing processes at high temperature under no flux and under molecular Si flux for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9b4a594df2816d8b40811e048bef268
https://doi.org/10.1116/1.1705577
https://doi.org/10.1116/1.1705577
Autor:
Xiao, Jianhua1 (AUTHOR), Wang, Yang1 (AUTHOR) landlord@uestc.edu.cn, Yuan, Liu1 (AUTHOR), Long, Yin1 (AUTHOR), Jiang, Zhi2 (AUTHOR), Liu, Qingxia1 (AUTHOR), Gu, Deen1 (AUTHOR), Li, Weizhi1 (AUTHOR), Tai, Huiling1 (AUTHOR) taitai1980@uestc.edu.cn, Jiang, Yadong1 (AUTHOR)
Publikováno v:
Advanced Science. Oct2023, Vol. 10 Issue 28, p1-10. 10p.
Autor:
Salehirozveh, Mostafa1,2 (AUTHOR), Kure Larsen, Anne‐Kathrine3,4,5 (AUTHOR), Stojmenovic, Milos6 (AUTHOR), Thei, Federico2 (AUTHOR) fthei@elements-ic.com, Dong, Mingdong3,7 (AUTHOR) dong@inano.au.dk
Publikováno v:
Chemistry - An Asian Journal. Sep2023, Vol. 18 Issue 17, p1-11. 11p.