High-Speed 1.3-$\mu\hbox{m}$ p-i-n GaNAsSb/GaAs Waveguide Photodetector

Autor: S.F. Yoon, Malek Zegaoui, Christiane Legrand, J. Chazelas, N Saadsaoud, Kian Hua Tan, D Decoster, Wan Khai Loke, Zhilin Xu, Satrio Wicaksono

Publikováno v: IEEE Electron Device Letters. 31:704-706

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i -n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- m-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 m is sandwiched

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05b7c43895f5033ae00929095d652f08
https://doi.org/10.1109/led.2010.2049563

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Autor: Satrio Wicaksono, Wan Khai Loke, Didier Decoster, J. F. Lampin, C. Tripon-Canseliet, Daosheng Li, N. Saadsaoud, Kian Hua Tan, Soon Fatt Yoon, Jean Chazelas

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2013, 103 (11), pp.111113. ⟨10.1063/1.4820797⟩
Applied Physics Letters, American Institute of Physics, 2013, 103 (11), pp.111113. ⟨10.1063/1.4820797⟩

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1388d097bd58373e8cc1b59b118177a0
https://hal.sorbonne-universite.fr/hal-00861768/file/Tan_2013_1.4820797.pdf

Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications

Autor: Zhe Xu, E. Dogheche, A. Malcoci, Mario Weiß, S.P. McAlister, T. K. Ng, J. F. Lampin, J. A. Gupta, S. Fedderwitz, S.F. Yoon, A. Söhr, Kian Hua Tan, A. Poloczek, Dieter Jäger, Salim Faci, K. L. Lew, Satrio Wicaksono, J. Chazelas, Wan Khai Loke, Didier Decoster, C. Tripon-Canseliet, O. Ecin, Y. K. Sim, Malek Zegaoui, N. Saadsaoud

Publikováno v: ECS Transcations
215th ECS Meeting
215th ECS Meeting, May 2009, San francisco, United States. pp.5-29, ⟨10.1149/1.3120682⟩
215th ECS Meeting, State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) and Processes at the Semiconductor Solution Interface 3
215th ECS Meeting, State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) and Processes at the Semiconductor Solution Interface 3, 2009, San Francisco, CA, United States. ⟨10.1149/1.3120682⟩

International audience; This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. P

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ffa5285f5d51fc79bed5c3cc5d43b50
https://hal.sorbonne-universite.fr/hal-00620077

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Autor: Jean Chazelas, Malek Zegaoui, Satrio Wicaksono, N. Saadsaoud, Wan Khai Loke, Didier Decoster, T. K. Ng, Z. Xu, Soon Fatt Yoon, K. L. Lew, Kian Hua Tan

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2008, 92 (11), pp.113513-1-3. ⟨10.1063/1.2898507⟩
Applied Physics Letters, American Institute of Physics, 2008, 92, pp.113513-1-3. ⟨10.1063/1.2898507⟩

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cd823c0e87014af6cbcae5479788f73
https://hal.science/hal-00357300

High thermally induced index variations with short response time in InP∕GaInAsP∕InP waveguide Schottky diodes

Autor: Didier Decoster, Malek Zegaoui, Xavier Wallart, N. Saadsaoud, J. Chazelas, Elhadj Dogheche

Publikováno v: Electronics Letters
Electronics Letters, IET, 2009, 45, pp.802-803. ⟨10.1049/el.2009.0696⟩
Electronics Letters, 2009, 45 (15), pp.802-803. ⟨10.1049/el.2009.0696⟩

Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP 1.15 /InP waveguide Schottky diodes for 1 W/mm electrical power per electrode length. Pulse response characterisation showed almost 700 ns response time for 1 ?s square pu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::175361e3bbd591b9d0e510e34d8c1db1
https://doi.org/10.1049/el.2009.0696