Zobrazeno 1 - 10 of 12 pro vyhledávání: '"N. S. VISWANATHAN"'
1
Improving resolution in photolithography with a phase-shifting mask
Autor: Marc D. Levenson, Robert A. Simpson, N. S. Viswanathan
Publikováno v: IEEE Transactions on Electron Devices. 29:1828-1836
The phase-shifting mask consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Destructive interference between waves from adjacent apertures
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8871923fcb964d397afd5715f2d6235
https://doi.org/10.1109/t-ed.1982.21037
Zobrazit plný text záznamu
2
Monte Carlo simulation of spatially distributed beams in electron‐beam lithography
Autor: N. S. Viswanathan, D. F. Kyser
Publikováno v: Journal of Vacuum Science and Technology. 12:1305-1308
The spatial distribution of energy deposited in a thin polymer film of polymethyl methacrylate (PMMA) by a laterally distributed electron beam is simulated with Monte Carlo calculations. The Monte Carlo simulation includes the significant contributio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::112c9bba8ae2576ed74769a44c095f3d
https://doi.org/10.1116/1.568524
Zobrazit plný text záznamu
3
Chemisorption of hydrogen on nickel–magnesia catalysts. Part I. General kinetic characteristics
Autor: L. M. Yeddanapalli, N. S. Viswanathan
Publikováno v: Canadian Journal of Chemistry. 47:2933-2941
A detailed study of the kinetics of hydrogen chemisorption on 3 different nickel catalysts, supported on magnesia and prepared by coprecipitation, has been made over a wide range of pressures and temperatures. The results have been analyzed in the li
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70eb5c7f6b7ab619276ff115ba8f27c3
https://doi.org/10.1139/v69-490
Zobrazit plný text záznamu
4
Simulation of plasma‐etched lithographic structures
Autor: N. S. Viswanathan
Publikováno v: Journal of Vacuum Science and Technology. 16:388-390
The resist development model has been extended to simulate etched images in semiconductor processing. The model has been used to simulate under a variety of conditions varying from conventional wet etching to newer directional etching processes such
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0805dba1b46914ef489863887cdadbb8
https://doi.org/10.1116/1.569957
Zobrazit plný text záznamu
5
Radiation chemistry of polymer degradation processes: Molecular weight distribution effects
Autor: N. S. Viswanathan
Publikováno v: Journal of Polymer Science: Polymer Chemistry Edition. 14:1553-1555
The molecular weight distributions of poly(methyl methacrylate) irradiated at 15 and 25 MeV with electron beams were investigated. The experimental values for the effect of chain scissions on the dispersivity agreed well with theoretical predictions.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ead24fc1b5719d2f99b1b3e630fa791b
https://doi.org/10.1002/pol.1976.170140623
Zobrazit plný text záznamu
10
Deep UV Ablation of PMMA Resists
Autor: S. Lindsey, N. S. Viswanathan, Michael T. Lanagan
Publikováno v: Japanese Journal of Applied Physics. 22:L67
Deep UV exposure of Polymethyl methacrylate resist systems has been investigated in the spectral region 220–250 nm using a special deep UV light source. The ablation of PMMA resist follows a quantitative exponential relation and is independent of m
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7f748f0ce97a078013bebcf361b9cbc
https://doi.org/10.1143/jjap.22.l67
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje