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pro vyhledávání: '"N. S. Terziev"'
Publikováno v:
Journal of Applied Physics. 79:2467-2472
The Te‐related DX center in Al0.3Ga0.7As0.02Sb0.98 layers of p‐n junctions and avalanche photodiodes has been studied by capacitance–voltage, deep level transient spectroscopy, and direct capacitance transient measurements. A process of DX cent
Publikováno v:
Heterostructure Epitaxy and Devices ISBN: 9789401065931
Heterostructure Epitaxy and Devices
Heterostructure Epitaxy and Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fa66bdecae974818669bd8467ebeb0c
https://doi.org/10.1007/978-94-009-0245-9_21
https://doi.org/10.1007/978-94-009-0245-9_21