Zobrazeno 1 - 1
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pro vyhledávání: '"N. S. Pasupuleti"'
Autor:
Wudyalew Wondmagegn, Israel Mejia, A. L. Salas-Villasenor, Ronald J. Pieper, A. L. Coogan, N. S. Pasupuleti, Manuel Quevedo-Lopez
Publikováno v:
45th Southeastern Symposium on System Theory.
Proposed and tested is a methodology for modeling polycrystalline thin film transistors which exhibit shifts in threshold voltage due to both grain boundaries and semiconductor thickness. The process involves a model, which uses in part standard-anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b89cc2683f1b98b33b491c9c87b57c82
https://doi.org/10.1109/ssst.2013.6524957
https://doi.org/10.1109/ssst.2013.6524957
