Výsledky vyhledávání - "N. S. Aramyan"

Deposition of high-ohmic oriented ZnO films on glass, Si, and PEDOT-PSS, PEDOT-PSS(PVA) substrates at low temperatures by DC-magnetron sputtering

Autor: K. E. Avjyan, E. R. Arakelova, G. N. Mirzoyan, A. M. Khachatryan, S. G. Grigoryan, N. S. Aramyan, V. A. Gevorkyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 46:293-299

Using the technique of DC-magnetron sputtering of zinc target in the temperature range from −30°C to 30°C, we have obtained high-ohmic ZnO films (1.1×109, 2×1011, 1.3×106, and 108 Ω cm) on the substrates of glass, Si, and composites based on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ed65ed5830e66f2d5eeb381a14d7d8e
https://doi.org/10.3103/s1068337211060089

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Lifetime of nonequilibrium charge carriers in the base of p-n-junction semiconductor diode at arbitrary injection levels

Autor: N. S. Aramyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 43:183-189

In the approximation of exponential distribution of nonequilibrium charge carriers in the base of semiconductor p-n-junction diode a formula is obtained for lifetime calculation, which is valid at arbitrary injection levels. The lifetime is determine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::438d8c831dad386e6eb7a2381d5039b7
https://doi.org/10.3103/s1068337208040063

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Small-signal surface photoemf in semiconductor MIS-structures

Autor: N. S. Aramyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 42:70-74

Calculation of the small-signal surface photoemf in MIS-structures has been performed. By assuming that under illumination the charge of the near-surface region of the semiconductor is constant, for the surface photoemf a simple formula is derived wh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73fc790b35072bad951a7760a64a7408
https://doi.org/10.3103/s1068337207020063

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Electric field distribution in the base of semiconductor p-n junction diode

Autor: N. S. Aramyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 42:34-37

An expression for distribution of the electric field in the base of a semiconductor p-n junction diode is obtained valid for arbitrary injection levels in the approximation of exponential distribution of non-equilibrium carriers in the diode base. It

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::af780f6596392fb3d0bfa8cc18d975c9
https://doi.org/10.3103/s1068337207010070

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