Zobrazeno 1 - 8
of 8
pro vyhledávání: '"N. S. Aramyan"'
Autor:
K. E. Avjyan, E. R. Arakelova, G. N. Mirzoyan, A. M. Khachatryan, S. G. Grigoryan, N. S. Aramyan, V. A. Gevorkyan
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 46:293-299
Using the technique of DC-magnetron sputtering of zinc target in the temperature range from −30°C to 30°C, we have obtained high-ohmic ZnO films (1.1×109, 2×1011, 1.3×106, and 108 Ω cm) on the substrates of glass, Si, and composites based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ed65ed5830e66f2d5eeb381a14d7d8e
https://doi.org/10.3103/s1068337211060089
https://doi.org/10.3103/s1068337211060089
Autor:
N. S. Aramyan
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 43:183-189
In the approximation of exponential distribution of nonequilibrium charge carriers in the base of semiconductor p-n-junction diode a formula is obtained for lifetime calculation, which is valid at arbitrary injection levels. The lifetime is determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438d8c831dad386e6eb7a2381d5039b7
https://doi.org/10.3103/s1068337208040063
https://doi.org/10.3103/s1068337208040063
Autor:
N. S. Aramyan
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 42:70-74
Calculation of the small-signal surface photoemf in MIS-structures has been performed. By assuming that under illumination the charge of the near-surface region of the semiconductor is constant, for the surface photoemf a simple formula is derived wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73fc790b35072bad951a7760a64a7408
https://doi.org/10.3103/s1068337207020063
https://doi.org/10.3103/s1068337207020063
Autor:
N. S. Aramyan
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 42:34-37
An expression for distribution of the electric field in the base of a semiconductor p-n junction diode is obtained valid for arbitrary injection levels in the approximation of exponential distribution of non-equilibrium carriers in the diode base. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af780f6596392fb3d0bfa8cc18d975c9
https://doi.org/10.3103/s1068337207010070
https://doi.org/10.3103/s1068337207010070
Autor:
Arakelova, E., Khachatryan, A., Avjyan, K., Aramyan, N., Gevorkyan, V., Grigoryan, S., Mirzoyan, G.
Publikováno v:
Journal of Contemporary Physics; Dec2011, Vol. 46 Issue 6, p293-299, 7p
Autor:
Aramyan, N.
Publikováno v:
Journal of Contemporary Physics; Aug2008, Vol. 43 Issue 4, p183-189, 7p
Autor:
Aramyan, N.
Publikováno v:
Journal of Contemporary Physics; Feb2007, Vol. 42 Issue 2, p70-74, 5p
Autor:
Aramyan, N.
Publikováno v:
Journal of Contemporary Physics; Jan2007, Vol. 42 Issue 1, p34-37, 4p