Zobrazeno 1 - 10
of 27
pro vyhledávání: '"N. R. Taskar"'
Publikováno v:
Journal of Crystal Growth. 110:692-696
The effect of Hg partial pressure on arsenic doping of HgCdTe is studied. It is found that control of Hg partial pressure is very important in obtaining reproducible doping, and use of high Hg pressure is the key to obtain heavily doped layers. Typic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9321b99d7937bc379bbb012bcaf3783
https://doi.org/10.1016/0022-0248(91)90625-f
https://doi.org/10.1016/0022-0248(91)90625-f
Publikováno v:
Journal of Crystal Growth. 106:513-523
The annealing behavior of Hg1−xCdxTe layers, grown by the conventional organometallic vapor phase epitaxy (OMVPE), is reported. Some of the as-grown layers, which are p-type with a concentration around 4 × 1016 cm-3 of Group II vacancies, become l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d9dc26c621a63d271c47ba88d0acc4
https://doi.org/10.1016/0022-0248(90)90024-f
https://doi.org/10.1016/0022-0248(90)90024-f
Publikováno v:
Journal of Crystal Growth. 102:413-418
The presence of an electron accumulation layer on the surface of n-type Hg1−xCdxTe causes the measured Hall mobility and carrier concentration to be significantly different from the actual bulk values. This discrepancy is not readily apparent in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8271872a1535031a621ad74573488ca3
https://doi.org/10.1016/0022-0248(90)90399-6
https://doi.org/10.1016/0022-0248(90)90399-6
Publikováno v:
Applied Physics Letters. 57:252-254
n‐type doping of mercury cadmium telluride was achieved using trimethylindium as the dopant source. The layers, grown by the alloy growth technique, were doped to ∼5×1018 cm−3. The donor concentration in these layers was found to exhibit a lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b600123c0d01007b4e06c4f758b0d91
https://doi.org/10.1063/1.103706
https://doi.org/10.1063/1.103706
Publikováno v:
AIP Conference Proceedings.
This paper describes the doping behavior of arsenic in HgCdTe, grown by organometallic epitaxy using the direct alloy growth process. It is shown that arsenic readily incorporates into HgCdTe during this growth process, to a doping concentration of 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e963f97d84e66dbf908844ddf315b0df
https://doi.org/10.1063/1.41079
https://doi.org/10.1063/1.41079
Publikováno v:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors.
The annealing behavior of Hg1CdTe layers, grown by the conventional Organometallic Vapor Phase Epitaxy (OMVPE) , is reported. As grown layers, which are p-type with a concentration around 4 x 10'6/cm3 of mercury vacancies, become light p-type with ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877bcab81d6f8c173e8b24e15a19c808
https://doi.org/10.1117/12.21704
https://doi.org/10.1117/12.21704
Publikováno v:
MRS Proceedings. 216
Hg1-xCdxTe layers, grown by the organometallic vapor phase epitaxy (OMVPE), are p-type with carrier concentrations around 4 × 1016/cm3 due to the Group II vacancies in them. Following a Hg saturated anneal at 220°C, these layers become n-type with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d9f9af878321464b3f28bda48dc7edb
https://doi.org/10.1557/proc-216-87
https://doi.org/10.1557/proc-216-87
Publikováno v:
Journal of The Electrochemical Society. 134:195-198
In this paper are presented some experimental results to explain mechanisms involved in the growth of CdTe by organometallic vapor-phase epitaxy (OMVPE). A pyrolysis study of dimethylcadmium (DMCd) was conducted in an OMVPE reactor, in the temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb4e724ef445a54e5a7f34d1293b320
https://doi.org/10.1149/1.2100404
https://doi.org/10.1149/1.2100404
Publikováno v:
Journal of Crystal Growth. 88:23-29
Cadmium telluride layers, grown on InSb substrates which were (100) 2° oriented towards (110), were examined using double crystal X-ray diffraction in conjunction with secondary ion mass spectrometry and photoluminescence. The layers were grown by o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48bcd96299b8dc4eb83c8752a85feb74
https://doi.org/10.1016/s0022-0248(98)90004-5
https://doi.org/10.1016/s0022-0248(98)90004-5
Publikováno v:
Journal of Crystal Growth. 77:480-484
Cadmium telluride has been grown on InSb substrates by the pyrolysis of dimethylcadmium and diethyltellurium, at growth temperatures from 350–420°C. Conditions are outlined for achieving layers with featureless morphology. As-grown layers were n-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75d0bec345e56937478ff7d075ee5bfc
https://doi.org/10.1016/0022-0248(86)90340-4
https://doi.org/10.1016/0022-0248(86)90340-4