Zobrazeno 1 - 10
of 12
pro vyhledávání: '"N. R. Jungwirth"'
Autor:
Christian J. Long, Dylan F. Williams, Nathan D. Orloff, Ari F Feldman, Bryan Bosworth, Kassiopeia Smith, Richard A. Chamberlin, Miguel Urteaga, N. R. Jungwirth, Jerome Cheron
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 12:63-69
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configurat
Autor:
Ari Feldman, Christian J. Long, Nathan D. Orloff, Tara M. Fortier, Franklyn Quinlan, Bryan Bosworth, Jerome Cheron, N. R. Jungwirth, Dylan F. Williams, Kassiopeia Smith, Richard A. Chamberlin
Publikováno v:
Conference on Lasers and Electro-Optics.
We developed a measurement system that combines on-wafer metrology and high-frequency network analysis to characterize the response of transmission-line integrated Er-GaAs and InGaAs photomixers up to 1 THz to support the telecommunication and electr
Autor:
N. R. Jungwirth, Christian J. Long, Jerome Cheron, Andreas Beling, Madison Woodson, Ari Feldman, Bryan Bosworth, Dylan F. Williams, Franklyn Quinlan, Nathan D. Orloff, Kassiopeia Smith, Jesse S. Morgan
Publikováno v:
Applied Physics Letters. 119:151106
Integrated circuits are building blocks in millimeter-wave handsets and base stations, requiring nonlinear characterization to optimize performance and energy efficiency. Today's sources use digital-to-analog converters to synthesize arbitrary electr
Autor:
Hussain Alsalman, Gregory D. Fuchs, Paul Cueva, Brian Calderon, Yimo Han, Yanxin Ji, Michael G. Spencer, David A. Muller, Jeonghyun Hwang, N. R. Jungwirth
Publikováno v:
ACS Nano. 11:12057-12066
Two-dimensional hexagonal boron nitride (h-BN) is a wide bandgap material which has promising mechanical and optical properties. Here we report the realization of an initial nucleation density of h-BN
Publikováno v:
Physical Review B. 99
We report on the modulation of the fine-structure splitting of quantum-confined excitons in localized quantum emitters hosted by a monolayer transition metal dichalcogenide (TMDC). The monolayer TMDC, tungsten diselenide (${\mathrm{WSe}}_{2}$), is en
Autor:
Michael G. Spencer, Gregory D. Fuchs, N. R. Jungwirth, Michael E. Flatté, Brian Calderon, Yanxin Ji
Publikováno v:
Nano Letters. 16:6052-6057
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically ac
Publikováno v:
ACS Nano. 10:1210-1215
Point defects in wide bandgap semiconductors are promising candidates for future applications that necessitate quantum light sources. Recently, defect-based single photon sources have been observed in ZnO that are very bright and remain photoactive f
Autor:
N. R. Jungwirth, Gregory D. Fuchs
Publikováno v:
Physical review letters. 119(5)
We investigate the polarization selection rules of sharp zero-phonon lines (ZPLs) from isolated defects in hexagonal boron nitride (h-BN) and compare our findings with the predictions of a configuration coordinate model involving two electronic state
Autor:
Evan MacQuarrie, Hung-Shen Chang, Gregory D. Fuchs, N. R. Jungwirth, Kayla X. Nguyen, Yun-Yi Pai
Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here we present confocal fluorescence measurements of individual defects in Al-doped ZnO nanop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75c0ade309dab5584b9d5fc7b0c612b0
As spin-based quantum technology evolves, the ability to manipulate spin with non-magnetic fields is critical - both for the development of hybrid quantum systems and for compatibility with conventional technology. Particularly useful examples are el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::298d8b55bf95cb79b93118614e63aa3b