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Autor:
N. N. Vorsin, A. A. Gladyshchu, T. L. Kushner, N. P. Tarasiuk, S. V. Chugunov, M. V. Borushko
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 8, Pp 50-57 (2022)
Ternary AlGaN alloys with a band gap of 3.4 to 6.2 eV are very promising for photodetectors in the UV wavelength range. Using the COMSOL MULTIPHYSICS software based on AlGaN, a p-i-n photodiode model was developed, including its I–V characteristic,
Externí odkaz:
https://doaj.org/article/73a0f11597b344cc8faff7d75dd2eda0
