Zobrazeno 1 - 10
of 35
pro vyhledávání: '"N. P. Gorbachuk"'
Autor:
N. A. Poklonski, A. I. Kovalev, K. V. Usenko, E. A. Ermakova, N. I. Gorbachuk, S. B. Lastovski
Publikováno v:
Pribory i Metody Izmerenij, Vol 14, Iss 1, Pp 38-43 (2023)
In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimete
Externí odkaz:
https://doaj.org/article/b467361c5fc34f5e9543b95ba56d7e99
Publikováno v:
Pribory i Metody Izmerenij, Vol 12, Iss 1, Pp 13-22 (2021)
The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities
Externí odkaz:
https://doaj.org/article/5b1220861ba34c9c90bf16cfc877b03a
Publikováno v:
Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên, Vol 129, Iss 1D, Pp 71-75 (2020)
This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz. The voltage dependence of the capacitance and the freq
Externí odkaz:
https://doaj.org/article/2a4a0f2548f7409c8f16d4914bb9227c
Publikováno v:
Pribory i Metody Izmerenij, Vol 10, Iss 4, Pp 322-330 (2019)
Transistor structures are the basic elements of integrated circuitry and are often used to create not only transistors themselves, but also diodes, resistors, and capacitors. Determining the mechanism of the occurrence of inductive type impedance in
Externí odkaz:
https://doaj.org/article/a6e50f30c0924cf3915e7225ab717a15
Publikováno v:
Pribory i Metody Izmerenij, Vol 10, Iss 3, Pp 253-262 (2019)
Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistor
Externí odkaz:
https://doaj.org/article/aae37640ac7a431d98b23f5ca86abcbd
Publikováno v:
Pribory i Metody Izmerenij, Vol 9, Iss 2, Pp 130-141 (2018)
The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters
Externí odkaz:
https://doaj.org/article/61ff96cdc974462fb9fe399ef27f275a
Publikováno v:
Pribory i Metody Izmerenij, Vol 7, Iss 3, Pp 312-321 (2016)
The aim of this work is the analysis of the influence of annealing in an inert atmosphere on the electrical properties and structure of non-stoichiometric tin dioxide films by means of impedance spectroscopy method. Non-stoichiometric tin dioxide fil
Externí odkaz:
https://doaj.org/article/156980dd27d54f27a7cbc79f0a37e07d
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 2, Pp 53-59 (2015)
The results of study at room temperature in the air of influences of the nonresonant absorption of microwave electromagnetic radiation by coal samples of different masses in the center of H102-resonator on the electron spin resonance (ESR) signal of
Externí odkaz:
https://doaj.org/article/b2606ea38b7a40e0a529c47bd0ac8fa0
Publikováno v:
Powder Metallurgy and Metal Ceramics. 57:336-343
The isobar heat capacity of Gd2Hf2O7 is studied for the first time by adiabatic calorimetry in the range 80–298.15 K. It is shown that Cp of gadolinium hafnate changes monotonically and no anomalies are observed. The temperature dependences of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9beca35117153c8de04d8af83ed9ca4
https://doi.org/10.1007/s11106-018-9988-7
https://doi.org/10.1007/s11106-018-9988-7
Publikováno v:
Powder Metallurgy and Metal Ceramics. 56:697-706
Lanthanum hafnate La2Hf2O7 was produced chemically by inverse precipitation from ammonia solution and a mixture of La and Hf nitrates, followed by hydroxide decomposition at 1250°C in air and melting of the oxide mixture in a solar furnace. The form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03eeb971557832e02c9c1da35a608b7
https://doi.org/10.1007/s11106-018-9945-5
https://doi.org/10.1007/s11106-018-9945-5