Zobrazeno 1 - 10
of 37
pro vyhledávání: '"N. P Garbar"'
Publikováno v:
Microelectronics Reliability. 53:394-399
The drain current I , spectral density of the low-frequency 1/ f noise S I and transconductance g m of triple gate bulk p -channel field-effect transistors (FinFETs) fabricated on 200 mm diameter Cz silicon wafers have been studied in the standard (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f524d4c242a553b15281058302f0718
https://doi.org/10.1016/j.microrel.2012.10.011
https://doi.org/10.1016/j.microrel.2012.10.011
Publikováno v:
Solid-State Electronics. 63:27-36
The LKE (Linear Kink Effect) and BGI (Back-Gate-Induced) Lorentzians present in the drain current noise spectra of fully-depleted tri-gate n - and p FinFETs, fabricated on sSOI and SOI substrates with HfSiON/SiO 2 gate dielectric are described. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffeafdea278d354629390bd92a1059dc
https://doi.org/10.1016/j.sse.2011.05.029
https://doi.org/10.1016/j.sse.2011.05.029
Publikováno v:
Solid-State Electronics. 53:613-620
The Lorentzian-like noise induced by Electron Valence Band (EVB) tunneling has been investigated in n- and p-channel multiple-gate field-effect transistors (MuGFETs), processed on silicon-on-insulator (SOI) and strained SOI (sSOI) substrates. The eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d2d1b0dcd6c7c871ec5573eee0e14a
https://doi.org/10.1016/j.sse.2009.03.021
https://doi.org/10.1016/j.sse.2009.03.021
Publikováno v:
Solid-State Electronics. 52:801-807
For fully-depleted SOI MOSFETs, fabricated in standard and strained 65 nm technologies, it is observed that the drain current I normalized for the device length L and width W levels off at sufficiently high gate voltage overdrives. Also the normalize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cbc9a26f0b62ebdcf0be67aa1fb7b17
https://doi.org/10.1016/j.sse.2007.12.011
https://doi.org/10.1016/j.sse.2007.12.011
Publikováno v:
2015 International Conference on Noise and Fluctuations (ICNF).
The effect of the S/D extensions architecture on the low-frequency noise and DC characteristics of Ultra-Thin Buried Oxide (UTBOX) SOI MOSFETs measured at zero/accumulated back-gate voltage is discussed. The undoped underlapped extensions were found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ae9aad9842de48c422e54e200886b2e
https://doi.org/10.1109/icnf.2015.7288629
https://doi.org/10.1109/icnf.2015.7288629
Publikováno v:
IEEE Transactions on Electron Devices. 53:3118-3128
In this paper, an analytical model is proposed for the impact of the twin-gate (TG) configuration on the floating-body-related excess Lorentzian noise in silicon-on-insulator MOSFETs. The model is based on the relative contributions in the master (so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ffa1a7abc7f460c23043cfd5c53efd6
https://doi.org/10.1109/ted.2006.885546
https://doi.org/10.1109/ted.2006.885546
Autor:
A. Smolanka, Steve Hall, M. Lokshin, N. Lukyanchikova, H.A.W. El Mubarek, Octavian Buiu, N. P Garbar, Ivona Z. Mitrovic, Peter Ashburn
Publikováno v:
Materials Science in Semiconductor Processing. 9:727-731
It is shown that the high base current and associated low-frequency noise typical for the SiGe HBTs prepared by the selective epitaxial growth of the collector and non-selective epitaxial growth of the base and emitter (SEG/NSEG technology), can be r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0ac9722475410ce90e6e139d39d7ae
https://doi.org/10.1016/j.mssp.2006.08.029
https://doi.org/10.1016/j.mssp.2006.08.029
Autor:
N. Lukyanchikova, Eddy Simoen, Joao Antonio Martino, Corneel Claeys, P. Ghedini Der Agopian, A. Smolanka, N. P Garbar
Publikováno v:
Solid-State Electronics. 50:52-57
The impact of using a twin-gate (TG) configuration on the Electron Valence-Band (EVB) tunnelling-related floating-body effects has been studied in partially depleted (PD) SOI MOSFETs belonging to a 0.13 μm CMOS technology. In particular, the influen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb398bdf9321a1311d6cf76f418c7b5b
https://doi.org/10.1016/j.sse.2005.10.038
https://doi.org/10.1016/j.sse.2005.10.038
Autor:
Steve Hall, M. Lokshin, A. Smolanka, N. P Garbar, Peter Ashburn, Huda El Mubarek, N. Lukyanchikova, Octavian Buiu, Ivona Z. Mitrovic
Publikováno v:
IEEE Transactions on Electron Devices. 52:1468-1477
A study is made of 1/f and generation/recombination (GR) noise in silicon-on-insulator (SOI) silicon-germanium heterojunction bipolar transistors fabricated using selective growth of the Si collector and nonselective growth of the SiGe base and n-typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dca206362e1b01471f37beef390b545
https://doi.org/10.1109/ted.2005.850697
https://doi.org/10.1109/ted.2005.850697
Publikováno v:
IEEE Transactions on Electron Devices. 51:1008-1016
The low-frequency (LF) noise in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs is investigated both theoretically and experimentally, with special emphasis on the front-back gate coupling effect. The impact of different technological paramete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::448699f1eacbb976b57b045f12bb0c5b
https://doi.org/10.1109/ted.2004.828159
https://doi.org/10.1109/ted.2004.828159