Zobrazeno 1 - 10
of 97
pro vyhledávání: '"N. Nolhier"'
Autor:
Christophe Viallon, Angélique Rissons, Fabien Destic, Stéphanie Lizy-Destrez, Arnaud Fernandez, N. Nolhier, Olivier Llopis
Publikováno v:
Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP)
Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP), Oct 2016, Long Beach, United States
IEEE
Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP), Oct 2016, Long Beach, United States
IEEE
International audience; The next generation of telecommunication satellites operating in the Ku and Ka bands consider radio over optical fiber (RoF) technologies as a good candidate for the future flexible payloads. In this context we have started a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7ceea24f0ef52274356a60bf287175a
https://doi.org/10.1109/avfop.2016.7789940
https://doi.org/10.1109/avfop.2016.7789940
Publikováno v:
The European Physical Journal Applied Physics. 5:171-178
In this paper, we propose a model for the LDMOS transistor used for power amplification in the frequencies band 1.8–2.2 GHz dedicated to the mobile telephony system Digital Cellular System (DCS). This model takes into account the behaviour of each
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb5e970e9b8f7fe7591c81cba69c1a9
https://doi.org/10.1051/epjap:1999126
https://doi.org/10.1051/epjap:1999126
Akademický článek
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Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 8:432-439
A model, using geometric optics, has been developed to calculate the illumination of a wafer inside a rapid thermal processor. The main parameters of the model are: the processing chamber geometry, the lamp number and location, the reflector characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90da9a532b2854d84036a751ac8b3e30
https://doi.org/10.1109/66.475185
https://doi.org/10.1109/66.475185
Publikováno v:
Applied Surface Science. 63:131-134
The results of in-situ monitoring of laser reflectivity during rapid thermal annealing (RTA) of cobalt layers on silicon are presented. 120 nm thick cobalt films were deposited. The wafers were implanted with silicon to ion beam mix the interface. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860a197cc2e2aa79a30a0e56f665f89f
https://doi.org/10.1016/0169-4332(93)90077-o
https://doi.org/10.1016/0169-4332(93)90077-o
Publikováno v:
Microelectronic Engineering. 19:379-382
The results of in-situ monitoring of laser reflectivity during Rapid Thermal Annealing (RTA) of cobalt layers on silicon are presented. 120 nm thick cobalt films were deposited. The wafers were implanted with silicon to ion beam mix the interface. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8f339cf9d129dcbb6c01ae3720b703
https://doi.org/10.1016/0167-9317(92)90458-4
https://doi.org/10.1016/0167-9317(92)90458-4
Publikováno v:
Applied Surface Science. 46:451-454
The temperature dependence of the solid-phase epitaxial growth rate of As + (60 keV, 4 × 10 15 cm -2 ) implanted Si(100) is measured by using in situ the time-resolved reflectivity technique in a rapid thermal processor. The wafers are annealed in n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff14e62f039be9e37c3295982b1906d
https://doi.org/10.1016/0169-4332(90)90188-6
https://doi.org/10.1016/0169-4332(90)90188-6
Publikováno v:
High robustness PNP-based structure for the ESD protection of high voltage I/Os in an advanced smart power technology
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2007, BOSTON, United States. pp.359
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2007, BOSTON, United States. pp.359
4 pages; International audience; A new device dedicated to the ESD protection of high voltage I/Os is presented. In addition to the use of specific design guidelines, the concept consists in coupling an open-base lateral PNP with a vertical avalanche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a758baa94ea76cd8b23e6bee35046ab2
https://doi.org/10.1109/bipol.2007.4351875
https://doi.org/10.1109/bipol.2007.4351875
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Publikováno v:
Proceedings of IEEE Systems Man and Cybernetics Conference - SMC.
In this paper, we first present a simulation tool to calculate, in two dimensions, a 4" Si wafer irradiation distribution. Then, the heat diffusion equation is numerically solved in two dimensions, and thermal maps of the wafer are given vs. various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43436cb9ca952db09b86ceee2e77e59e
https://doi.org/10.1109/icsmc.1993.384842
https://doi.org/10.1109/icsmc.1993.384842