Zobrazeno 1 - 10
of 38
pro vyhledávání: '"N. Nanda Kumar Reddy"'
Autor:
Harish Sharma Akkera, N. Nanda Kumar Reddy, Madhukar Poloju, M. Chandra Sekhar, C. Yuvaraj, G. Sadasiva Prasad
Publikováno v:
Acta Metallurgica Slovaca, Vol 22, Iss 4 (2016)
In the present investigation, three distinct aluminium-silicon (Al-Si) containing 7 wt.%, 12 wt.%, 14 wt.% of silicon and two different aluminium-magnesium (Al-Mg) alloys containing 2.5 wt.%, 4.5 wt.% of magnesium were prepared by casting route metho
Externí odkaz:
https://doaj.org/article/10b0f72c4a564b59a217e288aba4c5f6
Autor:
R．, Ravanamma, Nirlakalla, Ravi, Kummara, Venkata Krishnaiah, Khaerudini, Deni Shidqi, Kagola, Upendra Kumar, G．, Sreenivasa Kumar, N．, Nanda Kumar Reddy
Publikováno v:
In Journal of Molecular Structure 15 December 2023 1294 Part 2
Akademický článek
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Akademický článek
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Publikováno v:
Silicon. 13:65-71
The electrical properties have been investigated for Ni/Ta2O5/p-Si Metal/insulator/semiconductor SBD in the temperature regime 175–400 K. The electrical parameters were analyzed using current-voltage characteristics as a function of operating tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e371305a97e810c4b29694897b4391d
https://doi.org/10.1007/s12633-020-00407-3
https://doi.org/10.1007/s12633-020-00407-3
Autor:
Yugandhar Bitla, Kesarla Mohan Kumar, Srinivas Godavarthi, N. Nanda Kumar Reddy, Venkata Krishnaiah Kummara, V. Manjunath, Harish Sharma Akkera, S. A. K. Jilani, S.V. Prabhakar Vattikuti
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:8955-8966
In this manuscript, we reported the electrical characteristics and structural analysis of In/Fe3O4/SiO2/n-Si/In MIS-type SBD heterostructure comprehensively in the temperature range 10–300 K using I–V, XRD, TEM and AFM measurements. Pulsed laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::457f4fc4e942b1eb844da9d57209ea53
https://doi.org/10.1007/s10854-019-01223-1
https://doi.org/10.1007/s10854-019-01223-1
Autor:
S. Uthanna, P. P. George, C. Yuvaraj, G. Nethaji Reddy, K. Surekha, D. Ravikanth, G. Manjunatha, V. Manjunath, N. Nanda Kumar Reddy
Publikováno v:
INTERNATIONAL CONFERENCE ON MULTIFUNCTIONAL MATERIALS (ICMM-2019).
The electrical properties and transport mechanisms ofNi/PVA/n-Si MIS type SBDs was investigated using I-V measurements which were performed at room temperature. The fabricated MIS SBD exhibited good rectification ratio with low leakage current when c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f13c6a897fa8805f537b1999a25bebd
https://doi.org/10.1063/5.0019609
https://doi.org/10.1063/5.0019609
Publikováno v:
Silicon. 11:159-164
We describe the impact of Ta2O5 interfacial oxide layer thickness (ranging from 100-350 nm) on electrical and structural properties of Al/Ta2O5/p-Si/Al Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes using RF magnetron sputtering. We stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfdf9106375120becf88d4599cfec6c7
https://doi.org/10.1007/s12633-018-9840-1
https://doi.org/10.1007/s12633-018-9840-1
Autor:
N. Nanda Kumar Reddy, Harish Sharma Akkera, Si-Hyun Park, B. Purusottam Reddy, B. Poorna Prakash, S. Uthanna, M. Chandra Sekhar
Publikováno v:
Materials Science in Semiconductor Processing. 76:80-86
Thin films of (Ta2O5)(0.85)(TiO2)(0.15) were prepared on p-Si and quartz substrates by reactive magnetron sputtering and the influence of substrate bias voltage (V-b) on their structural and electrical properties was studied. The crystal structure of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db858e671b811e92d947ae9dd6b5e23
https://doi.org/10.1016/j.mssp.2018.01.001
https://doi.org/10.1016/j.mssp.2018.01.001
Autor:
B. Purusottam Reddy, S. Uthanna, Harish Sharma Akkera, N. Nanda Kumar Reddy, Si-Hyun Park, M. Chandra Sekhar, V. Rajendar
Publikováno v:
Journal of Alloys and Compounds. 718:104-111
In this study, we investigated the structural and electrical properties of TiO 2 /Ta 2 O 5 stacks prepared using DC reactive magnetron co-sputtering for as-deposited films and films annealed at 700 °C. X-ray diffraction studies revealed that the as-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae68703e48ec94a569d5cea61863128b
https://doi.org/10.1016/j.jallcom.2017.05.119
https://doi.org/10.1016/j.jallcom.2017.05.119