Zobrazeno 1 - 10
of 74
pro vyhledávání: '"N. N. Prokopenko"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 21, Iss 4, Pp 46-53 (2023)
To meet the existing needs of the domestic market of radio electronic equipment in high-speed wideband operational amplifiers, it was previously proposed to use the MH2XA031 master slice array containing complementary bipolar transistors, together wi
Externí odkaz:
https://doaj.org/article/4bb87a87efb24cefafc4114693ebc416
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 7, Pp 5-12 (2021)
One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing w
Externí odkaz:
https://doaj.org/article/6090279718c549ffa48b365dd76360da
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 5, Pp 52-60 (2021)
A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in
Externí odkaz:
https://doaj.org/article/8a3d6e8e72e84e61bfd2a8ed6afc8b1b
Autor:
O. V. Dvornikov, V. A. Tchekhovski, Ya. D. Galkin, A. V. Kunts, V. R. Stempitski, N. N. Prokopenko
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 81-87 (2020)
The aim of the work is analyzing the results of an experimental research of a charge-sensitive amplifier with an adjustable conversion coefficient and a base level recovery circuit fabricated on the master slice array MN2XA030 for silicon photomultip
Externí odkaz:
https://doaj.org/article/4d9cc84cebf148afa60c1aeaec69d2f6
Publikováno v:
Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, Iss 79 (2019)
We have developed technology and construction solutions system to increase differential pairs (DP) of JFet with p- and n-channels identity, which are included into silicon complementary bipolar process of SPE “Pulsar” (Moscow). The possibility of
Externí odkaz:
https://doaj.org/article/4efa641aa35546ca80c01dfc10acc7aa
Autor:
O. V. Dvornikov, V. A. Tchekhovski, N. N. Prokopenko, Ya. D. Galkin, A. V. Kunts, A. V. Bugakova
Publikováno v:
Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, Iss 78 (2019)
The implementation of a charge-sensitive amplifier (CSA) based on the МН2ХА030 array chip (AC) with an adjustable conversion factor for processing signals of silicone photomultipliers (SPM) is considered. The developed CSA, named ADPreampl3, cont
Externí odkaz:
https://doaj.org/article/a0ecdc2f60684ca18fd9601f04a2266c
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 2, Pp 42-46 (2015)
Schematic and design of electronics module for avalanche photodiode signal′s readout based on the pair of specialized analog ICs, are considered. Main specifications including input noise charge vs signal source capacity are presented.
Externí odkaz:
https://doaj.org/article/679ad530682b49b4b142697e9aa86989
Publikováno v:
Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, Iss 71 (2017)
The article considers the effect of 60Co gamma rays on the characteristics (the major ones for the analog ICs) of SiGe n-p-n transistors of SGB25V technology: the voltage across the forward-biased base-emitter junction, the dependence of the static b
Externí odkaz:
https://doaj.org/article/95bcb7ae5f024855ae2a1281569adbb4
Publikováno v:
Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, Iss 69 (2017)
The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic. The a
Externí odkaz:
https://doaj.org/article/df2c9ebdede14d64a9b742cf0f67bf0e
Publikováno v:
Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, Iss 66 (2016)
The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement te
Externí odkaz:
https://doaj.org/article/d819159794624a27aa09f03f0da54df4