Zobrazeno 1 - 2
of 2
pro vyhledávání: '"N. N. Migal"'
Publikováno v:
Physica Status Solidi (a). 15:697-710
The dislocation structure of Ge layers has been studied by X-ray topography. The configuration, type, and density of dislocation are found to depend on temperature and growth rate. It is suggested, that the mechanism of the dislocation generation is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1155aa11486982a32aba899c405f50b6
https://doi.org/10.1002/pssa.2210150242
https://doi.org/10.1002/pssa.2210150242
Publikováno v:
Journal of Vacuum Science and Technology. 6:566-568
Films of about 100 μ thickness were grown by iodide-transport process in a closed tube, with the concentration of acceptor impurities below 1012 cm−3. Measurements were made on the samples, which had one natural surface of film growth and the othe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edec10579e916db0e292d8f3ccdc00dd
https://doi.org/10.1116/1.1315684
https://doi.org/10.1116/1.1315684