Zobrazeno 1 - 8
of 8
pro vyhledávání: '"N. N. Migal"'
Publikováno v:
Physica Status Solidi (a). 15:697-710
The dislocation structure of Ge layers has been studied by X-ray topography. The configuration, type, and density of dislocation are found to depend on temperature and growth rate. It is suggested, that the mechanism of the dislocation generation is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1155aa11486982a32aba899c405f50b6
https://doi.org/10.1002/pssa.2210150242
https://doi.org/10.1002/pssa.2210150242
Publikováno v:
Journal of Vacuum Science and Technology. 6:566-568
Films of about 100 μ thickness were grown by iodide-transport process in a closed tube, with the concentration of acceptor impurities below 1012 cm−3. Measurements were made on the samples, which had one natural surface of film growth and the othe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edec10579e916db0e292d8f3ccdc00dd
https://doi.org/10.1116/1.1315684
https://doi.org/10.1116/1.1315684
Autor:
Shikin, V.1 shikin@issp.ac.ru
Publikováno v:
Journal of Experimental & Theoretical Physics. Nov2016, Vol. 123 Issue 5, p859-863. 5p.
Autor:
T. F. Connolly
Since 1963 the Research Materials Information Center has been answering inquiries on the availability, preparation, and properties of ultrapure inorganic research specimens. It has been possible to do this with reasonable efficiency by searching an a
Autor:
T. Wolkenstein
'Hands are useless if there are no eyes to see what is obvious.'-M. V. Lomonosov Dear Reader, I invite you to open this book and step on the semiconductor surface, where the processes that form the subject of the book come into play. The surface of t