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pro vyhledávání: '"N. N. Loyko"'
Autor:
N. N. Loyko, V. M. Konnov, T. V. Larikova, Nikolai A. Sobolev, V. A. Dravin, V. V. Ushakov, I. P. Kazakov, A.A. Gippius
Publikováno v:
Materials Science Forum. :917-922
Publikováno v:
Solid State Communications. 96:839-842
Optical activation of Yb in GaAs was achieved by co-implantation of Yb and group VI elements (O,S,Se,Te). Efficient luminescence complexes “Yb+O+S/Se/Te” showed systematic increase of transition energy with the increase of chalcogen atom size and
Publikováno v:
Scopus-Elsevier
Interaction of rare earth element Yb with oxygen and chalcogenide (S, Se, Te) co-dopants in thin ion-implanted GaAs layers was found to produce efficient luminescence complexes Yb+O+S/Se/Te with systematic increase of transition energy with the incre
Publikováno v:
Scopus-Elsevier
Yb in GaAs is generally believed to be optically inactive due to very low fraction of Yb in substitutional position. In the present work it is demonstrated that Yb can be rendered optically active in GaAs if it is incorporated in three-component comp