Zobrazeno 1 - 7
of 7
pro vyhledávání: '"N. N. Loyko"'
Autor:
N. N. Loyko, V. M. Konnov, T. V. Larikova, Nikolai A. Sobolev, V. A. Dravin, V. V. Ushakov, I. P. Kazakov, A.A. Gippius
Publikováno v:
Materials Science Forum. :917-922
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::940d1bd27374683b1fff90d785984bd5
https://doi.org/10.4028/www.scientific.net/msf.258-263.917
https://doi.org/10.4028/www.scientific.net/msf.258-263.917
Publikováno v:
Solid State Communications. 96:839-842
Optical activation of Yb in GaAs was achieved by co-implantation of Yb and group VI elements (O,S,Se,Te). Efficient luminescence complexes “Yb+O+S/Se/Te” showed systematic increase of transition energy with the increase of chalcogen atom size and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac56b2fe3e23a8d9809ac2dd593e13c
https://doi.org/10.1016/0038-1098(95)00582-x
https://doi.org/10.1016/0038-1098(95)00582-x
Publikováno v:
Scopus-Elsevier
Interaction of rare earth element Yb with oxygen and chalcogenide (S, Se, Te) co-dopants in thin ion-implanted GaAs layers was found to produce efficient luminescence complexes Yb+O+S/Se/Te with systematic increase of transition energy with the incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fdf22d8f521bd649af9307c416b4256
https://doi.org/10.1117/12.229155
https://doi.org/10.1117/12.229155
Publikováno v:
Scopus-Elsevier
Yb in GaAs is generally believed to be optically inactive due to very low fraction of Yb in substitutional position. In the present work it is demonstrated that Yb can be rendered optically active in GaAs if it is incorporated in three-component comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aa5bfe1caeccf01cdb8201d132fa54b
https://doi.org/10.1557/proc-422-187
https://doi.org/10.1557/proc-422-187
Publikováno v:
Semiconductors. Jun99, Vol. 33 Issue 6, p627. 3p.
Autor:
Palmer, D. W., Dravin, V. A., Konnov, V. M., Bobrova, E. A., Loıko, N. N., Chernook, S. G., Gippius, A. A.
Publikováno v:
Semiconductors. Mar2001, Vol. 35 Issue 3, p325. 6p.
Autor:
M.S. Shur, R.A. Suris
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, he
