Zobrazeno 1 - 3
of 3
pro vyhledávání: '"N. N. Krivolapov"'
Publikováno v:
Russian Physics Journal. 35:487-489
In this paper we demonstrate the possibility of using Abrahams-Buiocchi etchant, widely used for revealing the dislocation structure of GaAs monocrystals, for studying submicroscopic impurity micro-inhomogeneities in epitaxial layers of GaAs. The req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a1b18556bf66180cf88052c689af11
https://doi.org/10.1007/bf00558865
https://doi.org/10.1007/bf00558865
Publikováno v:
Soviet Physics Journal. 35:51-52
A direct experimental proof was obtained (in the specific case of GaAs) of the dominant role of the substrate surface in the formation of defects representing step retardation sites during vapor phase epitaxy of III–V compounds.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::924aa92a9827264a175ca4354a5b4f65
https://doi.org/10.1007/bf01324985
https://doi.org/10.1007/bf01324985
Publikováno v:
Soviet Physics Journal. 28:149-153
The element composition and crystal structure of a second phase forming growth microdefects were investigated by electron microscopy, reflection electron diffraction, and electron-probe microanalysis at various stages of the gas-phase epitaxy of gall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d947adee7cd522afc8f3b2c4af7de6b0
https://doi.org/10.1007/bf00912512
https://doi.org/10.1007/bf00912512