Dielectric response of sputtered transition metal oxides

Autor: V. G. M. Sivel, N. N. Iosad, N. M. van der Pers, G. J. Ruis, P. F. A. Alkemade, Alberto F. Morpurgo, E. V. Morks

Publikováno v: Journal of applied physics, Vol. 95, No 12 (2004) pp. 8087-8091

We have investigated the dielectric properties of thin layers of five oxides of transition metals (Ta2O5, HfO2, ZrO2, (ZrO2)0.91(Y2O3)0.09, and Sn0.2Zr0.2Ti0.6O2) sputtered from ceramic targets at different pressures. We find that layers deposited at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b62c346fbcc193bd60b72476beb386e
https://doi.org/10.1063/1.1712008

Texture-related roughness of (Nb,Ti)N sputter-deposited films

Autor: N. N. Iosad, T. M. Klapwijk, B. D. Jackson, N. M. van der Pers, P. N. Dmitriev, S. Grachev, M. Zuiddam

Publikováno v: IEEE Transactions on Applied Superconductivity, 13 (2)
IEEE Transactions on Applied Superconductivity, 13(2), 3301-3304. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

We study the properties of (Nb,Ti)N films deposited by reactive magnetron sputtering in an atmosphere of argon and nitrogen at ambient substrate temperature, focusing, in particular, on the technological factors determining film texture and roughness

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f2d1ed59e695f30276657044eeda1df
https://doi.org/10.1109/tasc.2003.812296

1-THz low-noise SIS mixer with a double-dipole antenna

Autor: B. D. Jackson, Andrey M. Baryshev, A. V. Markov, Sergey V. Shitov, T. M. Klapwijk, N. N. Iosad, J. R. Gao

Publikováno v: Technical Physics. 47:1152-1157

A quasi-optical mixer containing two Nb/Al/AlOx/Nb superconducting tunnel junctions integrated into a NbTiN/SiO2/Al microstrip line is studied experimentally in the 800–1000 GHz frequency range. The mixer is developed as an optional front end of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0133d69bb45fc7a061761092738a3be
https://doi.org/10.1134/1.1508081

Characterization of the fabrication process of Nb/Al$ndash$AlNx/Nb tunnel junctions with low RnA values up to 1 $\Omega$ $\mu$m2

Autor: F.E. Meijer, N. N. Iosad, T. M. Klapwijk, B. D. Jackson, A.B. Ermakov

Publikováno v: Superconductor Science and Technology. 15:945-951

We discuss and characterize the fabrication process of superconductor–insulator–superconductor (SIS) junctions based on a Nb/Al–AlNx/Nb tri-layer. Utilization of the AlNx tunnel barrier, produced by Al nitridation in a nitrogen glow discharge,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6fd73447326e8cf40d887f8c48b165eb
https://doi.org/10.1088/0953-2048/15/6/319

Superconducting transition metal nitride films for THz SIS mixers

Autor: P. N. Dmitriev, V.V. Roddatis, B. D. Jackson, A.V. Varlashkin, J. R. Gao, T. M. Klapwijk, N. N. Iosad, Sergey N. Polyakov

Publikováno v: IEEE Transactions on Applied Superconductivity, 11 (1)
IEEE Transactions on Applied Superconductivity

The development of sensitive THz SIS mixers requires a low-loss superconducting strip-line material with a transition temperature above 15 K. In this paper we examine the properties of (Nb,Ti)N, NbN, and (Nb,Zr)N thin films sputtered at ambient subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74791884c1b5736f98bb9f846af68f94
https://doi.org/10.1109/77.919900