Zobrazeno 1 - 6
of 6
pro vyhledávání: '"N. Mettlach"'
Publikováno v:
Applied Surface Science. 206:102-109
The reduction of partially- and fully-oxidized Cu films was carried out by vacuum annealing, and the reduction mechanisms were investigated in situ by XPS. For a partially-oxidized Cu film, CuO was reduced to Cu 2 O around 380 K, and the Cu 2 O conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4540a73c598e81e706c327e278c3917
https://doi.org/10.1016/s0169-4332(02)01239-4
https://doi.org/10.1016/s0169-4332(02)01239-4
Publikováno v:
Thin Solid Films. 376:73-81
Several commercially available organometallic precursors have been evaluated for metallorganic chemical vapor deposition (MOCVD) of pure ruthenium films. Of these, only a dimer, [RuC5H5(CO)2]2, proved suitable for CVD. On patterned Si3N4 and flat bar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee8342746708ac292ff67d1e1a57e81e
https://doi.org/10.1016/s0040-6090(00)01356-0
https://doi.org/10.1016/s0040-6090(00)01356-0
Autor:
N. Mettlach, X.-M. Yan, J. P. Endle, R. L. Hance, J. M. White, John G. Ekerdt, P. D. Kirsch, Y. M. Sun, Sucharita Madhukar
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:10-16
We have investigated the chemistry of the iridium precursor ((methylcyclopentadienyl) (1,5-cyclooctadiene))iridium (MeCpIrCOD) and have utilized the precursor for chemical vapor deposition (CVD) of iridium films. The vapor pressure of the precursor i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01c3af76f98070e8d858725708114dd
https://doi.org/10.1116/1.582151
https://doi.org/10.1116/1.582151
Autor:
John G. Ekerdt, R. L. Hance, N. Mettlach, J. M. White, J. Lozano, Y. M. Sun, Sucharita Madhukar
Publikováno v:
MRS Proceedings. 596
Platinum film growth using Pt(PF3)4 precursors was investigated. The study focused on three aspects of film growth: conformality, adhesion and selective growth. Pt(PF3)4 deposited pure Pt films over a wide range of temperatures (∼200 to 400 °C). A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44ccce13d45ed515223483df80477ef4
https://doi.org/10.1557/proc-596-103
https://doi.org/10.1557/proc-596-103
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