Zobrazeno 1 - 10
of 56
pro vyhledávání: '"N. Menou"'
Autor:
Jorge A. Kittl, Wouter Polspoel, M. Schaekers, Tom E. Blomberg, Johannes Meersschaut, Aude Rothschild, J.W. Maes, Paola Favia, Mihaela Popovici, Hugo Bender, Ben Kaczer, Karl Opsomer, Christoph Adelmann, Bogdan Govoreanu, Robin Degraeve, Werner Knaepen, N. Menou, Pamela René Fischer, Wilfried Vandervorst, Valery V. Afanas'ev, A. Franquet, Dieter Pierreux, T. Conrad, Dirk Wouters, S. Van Elshocht, Malgorzata Jurczak, J. Swerts, Mohammed Zahid, K. Tomida, Geoffrey Pourtois, Christophe Detavernier, X.P. Wang, Sergiu Clima, D. Manger, Annelies Delabie, Bert Brijs, J. Van Houdt, M. A. Pawlak
Publikováno v:
ECS Transactions. 19:29-40
The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26776181d9cfeddefe58078b346e7a09
https://doi.org/10.1149/1.3118928
https://doi.org/10.1149/1.3118928
Autor:
Ivan Baturin, V. Ya. Shur, D. K. Kuznetsov, Ch. Muller, Andris Sternberg, T. Schneller, N. Menou
Publikováno v:
Ferroelectrics. 340:161-167
Spatially non-uniform imprint behavior induced by X-ray synchrotron, electron, and neutron irradiation has been investigated in Pb(Zr,Ti)O3 thin films. The obtained effects have been explained as a result of acceleration of the bulk screening process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::302a02b935ae728117ed5e89f2ebac74
https://doi.org/10.1080/00150190600889288
https://doi.org/10.1080/00150190600889288
Publikováno v:
Journal of Applied Crystallography. 39:376-384
Future development of ferroelectric random access memory requires the integration of three-dimensional ferroelectric capacitors (FeCAP) in a microelectronic architecture. In this paper, pin-shaped two-dimensional and three-dimensional Sr0.8Bi2.2Ta2O9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::172da9869441e85a8775c7599a87a376
https://doi.org/10.1107/s002188980601082x
https://doi.org/10.1107/s002188980601082x
Autor:
G. Anastasi, Judit Lisoni, N. Menou, I. L. Fragala, Maria Favazza, Ch. Muller, A. Baeri, Dirk J. Wouters, Guglielmo G. Condorelli, C. Bedoya, R. Lo Nigro
Publikováno v:
Chemistry of Materials. 18:1016-1022
MOCVD fabrication of ferroelectric SrBi 2 Ta 2 O 9 (SBT) films using Sr(hfac) 2 ·tetraglyme, Bi(C 6 H 5 ) 3 , and Ta(OC 2 H 5 ) 5 precursors is reported. The SBT phase has been reproducibly obtained adopting a two-step procedure, namely, the deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ed087525639210816460ae848cea6c
https://doi.org/10.1021/cm051151+
https://doi.org/10.1021/cm051151+
Autor:
Jean-Louis Hodeau, T. Schneller, N. Menou, D. K. Kuznetsov, Ch. Muller, Ivan Baturin, V. Ya. Shur
Publikováno v:
Journal of Physics: Condensed Matter. 17:7681-7688
Highly brilliant synchrotron x-ray radiation was used to measure in situ the microstructural response of a ferroelectric capacitor subjected to bipolar rectangular pulses. High-resolution x-ray diffraction experiments were performed on a (111)-orient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de16b9c665e43cf6f0d230db1d607e8b
https://doi.org/10.1088/0953-8984/17/48/018
https://doi.org/10.1088/0953-8984/17/48/018
Autor:
D. K. Kuznetsov, Ch. Muller, Ivan Baturin, Vladimir Ya. Shur, Andris Sternberg, Jean-Louis Hodeau, N. Menou
Publikováno v:
Materials Science and Engineering: B. 120:141-145
Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol–gel Pb(Zr,Ti)O3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bb7650cdb3215156b2da94e45fc7f2d
https://doi.org/10.1016/j.mseb.2005.02.024
https://doi.org/10.1016/j.mseb.2005.02.024
Autor:
Raffaele Zambrano, Cesare Artoni, Christophe Muller, Dirk Wouters, D. Maes, Judit Lisoni, M. Schwitters, G. Russo, Luc Haspeslagh, G. Corallo, N. Menou, Ludovic Goux, Vasile Paraschiv
Publikováno v:
IEEE Transactions on Electron Devices. 52:447-453
Ferroelectric random access memories (FeRAMs) combine very attractive properties such as low-voltage operation, fast write and nonvolatility. However, unlike Flash memories, FeRAMs are difficult to scale along with the CMOS technology roadmap, mainly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78bc49a159121d4ccc4f8fb1ac0af235
https://doi.org/10.1109/ted.2005.845082
https://doi.org/10.1109/ted.2005.845082
Autor:
V. Ya. Shur, Dirk Wouters, Ivan Baturin, N. Menou, A. M. Castagnos, Ch. Muller, J. A. Johnson
Publikováno v:
Integrated Ferroelectrics. 61:89-95
This paper presents a preliminary study of the degradation and restoration of ferroelectric properties under X-ray irradiation of Pt/SBT/Pt ferroelectric capacitors (FeCAP) and the degradation in Pt/PZT/Pt FeCAPs. The results seem to point out that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae279c75fdf15da99f7df8dbe6d4b7e
https://doi.org/10.1080/10584580490458784
https://doi.org/10.1080/10584580490458784
Autor:
N. Menou, D. K. Kuznetsov, Ch. Muller, V. Ya. Shur, Andris Sternberg, Ivan Baturin, T. Schneller
Publikováno v:
Physics of the Solid State. 48:1174-1176
The effect of irradiation with electrons and neutrons and of exposure to synchrotron radiation on cyclic switching of polarization in thin films of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) was studied. It is shown that variations in the shape of swi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7daa4cbaebc345c1359c50605464985d
https://doi.org/10.1134/s1063783406060497
https://doi.org/10.1134/s1063783406060497
Autor:
Jorge A. Kittl, S. Biesemans, S. Van Elshocht, Mihaela Popovici, Christophe Detavernier, B. Kaczer, N. Menou, Dirk J. Wouters, Karl Opsomer, A. Franquet, M. A. Pawlak
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4ee8b2d18e5393caa0e64a9b7cafc5b
https://doi.org/10.7567/ssdm.2009.g-1-5
https://doi.org/10.7567/ssdm.2009.g-1-5